Owner manual

DMP21D5UFB4
Document number: DS35284 Rev. 5 - 2
4 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMP21D5UFB4
ADVANCE INFORMATION
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50
-25 0 25 50 75 100 125 150
-V ,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
I = -250µA
D
I= -1mA
D
-I , SOURCE CURRENT (A)
S
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
0.2
0.4
0.6
0.8
0.4 0.6 0.8 1.0 1.2
1.0
T= 25C
A
°
1
10
100
0 5 10 15 20
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
C
,
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (
p
F
)
T
1
10
100
1,000
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
-I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
T = 1
A
25 C °
048121620
T = 8
A
5C °
T = 2
A
5C °
T = 1
A
50 C °
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 11 SOA, Safe Operation Area
P = 10ms
W
-I , DRAIN CURRENT (A)
D
T = 150 C
T= 25C
Single Pulse
J(MAX)
A
°
°
0.001
0.01
0.1
1
P = 10s
W
DC
P=1s
W
P = 100ms
W
R
Limited
DS(ON)
P=1ms
W
P = 100µs
W
0
1
2
3
4
5
6
7
8
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Q , TOTAL GATE CHARGE (nC)
Fig. 12 Gate-Charge Characteristics
g
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS