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DMP21D5UFD

Document number: DS35931 Rev. 4 - 2

1 of 6

www.diodes.com

August 2012

DMP21D5UFD

ADVANCE INFORMATION

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON) max

Package

= +25°C

-20V

1.0Ω @ V

= -4.5V

X1-DFN1212-3

-600mA

1.5Ω @ V

= -2.5V

-500mA

2.0Ω @ V

= -1.8V

-400mA

3.0Ω @ V

= -1.5V

-250mA

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• DC-DC Converters

• Power Management Functions

Features

• Low On-Resistance

• Very Low Gate Threshold Voltage V

GS(TH)

, 1.0V max

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1212-3

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: NiPdAu over Copper leadframe. Solderable per MIL-

STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.005 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMP21D5UFD-7 X1-DFN1212-3 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View Bottom View

Pin-out Top view

ESD PROTECTED

Source

Gate

Protection

Diode

Gate

Drain

Equivalent Circuit

KP2 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

KP2

Summary of content (6 pages)

PAGE 1
DMP21D5UFD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V(BR)DSS Features RDS(ON) max -20V 1.0Ω @ VGS = -4.5V -600mA 1.5Ω @ VGS = -2.5V -500mA 2.0Ω @ VGS = -1.8V • • • • • • • • ID TA = +25°C Package X1-DFN1212-3 -400mA -250mA 3.0Ω @ VGS = -1.5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
PAGE 2
DMP21D5UFD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -4.5V Steady State Continuous Drain Current (Note 6) VGS = -1.
PAGE 3
DMP21D5UFD 1.0 1.0 0.8 0.8 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 0.6 0.4 0.4 0.2 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 5 2.0 1.8 1.6 1.4 VGS = -1.8V 1.2 1.0 VGS = -2.5V 0.8 0.6 VGS = -4.5V 0.4 0.2 0 TA = -55° C 0.6 0 0.2 0.4 0.6 0.8 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.5 1.3 1.1 0.9 0.7 0.5 -50 Document number: DS35931 Rev. 4 - 2 3.
PAGE 4
DMP21D5UFD 1.2 0.8 -IS, SOURCE CURRENT (A) -VGS(th), GATE THRESHOLD VOLTAGE (V) 1.0 1.0 ID = -1mA 0.8 ID = -250µA 0.6 0.4 0.6 T A= 25°C 0.4 0.2 0.2 0 -50 0 0.4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Ciss -IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.
PAGE 5
DMP21D5UFD Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 A1 D e b1 (2x) E X1-DFN1212-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 D 1.15 1.25 1.20 E 1.15 1.25 1.20 e 0.80 L 0.25 0.35 0.30 All Dimensions in mm L b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
PAGE 6
DMP21D5UFD ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).