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DMP2200UFCL

Document number: DS36619 Rev. 2 - 2

1 of 6

www.diodes.com

June 2014

DMP2200UFCL

ADVANCE INFORMATION

NEW PRODUCT

Dual P-CHANNEL ENHANCEMENT MODE MOSFET

Summary

(BR)DSS

DS(on)

max I

max

-20V

200mΩ @V

= -4.5V

-1.7 A

290mΩ @V

= -2.5V

-1.3 A

390mΩ @V

= -1.8V

-1.1 A

650mΩ @V

= -1.5V

-0.5 A

Description

This device provides a high performance, low R

DS(ON)

P-Channel

MOSFET in the thermally and spatially efficient DFN1616-6 package.

The low R

DS(ON)

of this MOSFET ensures conduction losses are kept

making it ideal for use in the following applications:

Applications

• Battery disconnect switch

• Load switch for power management functions

Features

• Typical off board profile of 0.5mm - ideally suited for thin

applications

• Low R

DS(ON)

– minimizes conduction

losses

• PCB footprint of 2.56mm

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

• ESD Protected Gate

Mechanical Data

• Case: U-DFN1616-6 Type F

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Lead Free Plating (NiPdAu Finish over Copper leadframe).

• Terminals: Solderable per MIL-STD-202, Method 208

• Weight: 0.04 grams (approximate)

Ordering Information (Note 4)

Product Reel size (inches) Tape width (mm) Quantity per reel

DMP2200UFCL-7 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2014 2015 2016 2017 2018 2019 2020

Code B C D E F G H

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

P20 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: B= 2014)

M = Month (ex: 9 = September)

Device Symbol Pin Configuration

Bottom View

ESD PROTECTED

P20

Bottom View

Pin1

Summary of content (6 pages)

PAGE 1
DMP2200UFCL Dual P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features V(BR)DSS ADVANCE INFORMATION NEW PRODUCT -20V RDS(on) max ID max 200mΩ @VGS = -4.5V -1.7 A 290mΩ @VGS = -2.5V -1.3 A 390mΩ @VGS = -1.8V -1.1 A 650mΩ @VGS = -1.5V -0.5 A Description This device provides a high performance, low RDS(ON) P-Channel MOSFET in the thermally and spatially efficient DFN1616-6 package.
PAGE 2
DMP2200UFCL Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS -20 V Gate-Source Voltage VGSS ±8 V ID -1.7 -1.2 A ADVANCE INFORMATION NEW PRODUCT Continuous Drain Current (Note 6) @TA = +25°C @TA = +85°C Units Thermal Characteristics (@TA = +25°C, unless otherwise specified.
PAGE 3
DMP2200UFCL 10 T A = 25°C VGS = -4.0V VGS = -4.5V 8 VGS = -3.0V 6 VGS = -2.5V 4 VGS = -2.0V 2 TA = -55° C VDS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 8 TA = 150°C T A = 85°C TA = 125°C 6 4 2 VGS = -1.5V VGS = -1.2V 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.4 VGS = -2.5V VGS = -4.5V 0.2 0.1 0 0 2 4 6 8 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs.
PAGE 4
DMP2200UFCL VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.4 VGS = -2.5V ID = -1A 0.3 0.2 VGS = -4.5V ID = -3A 0.1 0.6 -ID = 250µA 0.4 0.2 1000 CT, JUNCTION CAPACITANCE (pF) 8 -IS, SOURCE CURRENT (A) -I D = 1mA -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10 TA= 150°C 6 TA= 125°C 4 T A= 85°C TA= 25°C 2 T A= -55°C 0 0.
PAGE 5
DMP2200UFCL D = 0.9 D = 0.7 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION NEW PRODUCT 1 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 190°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
PAGE 6
DMP2200UFCL IMPORTANT NOTICE ADVANCE INFORMATION NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).