Owner manual

DMP2240UW
Document number: DS31372 Rev. 3 - 2
1 of 5
www.diodes.com
May 2010
© Diodes Incorporated
DMP2240UW
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
P-Channel MOSFET
Low On-Resistance
150 mΩ @ V
GS
= -4.5V
200 mΩ @ V
GS
= -2.5V
240 mΩ @ V
GS
= -1.8V
Very Low Gate Threshold Voltage V
GS(th)
1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±12 V
Drain Current (Note 1)
T
A
= 25°C
T
A
= 70°C
I
D
-1.5
-1.0
A
Pulsed Drain Current
I
DM
-5 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 1)
P
D
250 mW
Thermal Resistance, Junction to Ambient
R
θ
JA
500 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Notes: 1. Device mounted on FR-4 substrate PC board, 2oz. Copper, with minimum recommended pad layout.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SOT-323
Top View
To
p
View
Internal Schematic
Source
Gate
Drain
GS
D

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