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DMP3010LK3

Document number: DS35716 Rev. 4 - 2

1 of 7

www.diodes.com

February 2012

DMP3010LK3

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on) max

= 25°C

-30V

8mΩ @ V

GS = -10V -17A

10.2mΩ @ V

= -4.5V

-14.5A

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

• DC-DC Converters

• Power management functions

• Backlighting

Features and Benefits

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• "Green" Device (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252 (DPAK)

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.33 grams (approximate)

Ordering Information (Note 2)

Part Number Qualification Case Packaging

DMP3010LK3-13 Commercial TO252 2,500/Tape & Reel

DMP3010LK3Q-13 Automotive TO252 2,500/Tape & Reel

Notes: 1. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

2. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Equivalent Circuit

Top View

Pin-Out

Top View

TO252

YYWW

P3010L

Logo

Part no.

Year: “11” = 2011

Xth week: 01 ~ 53

Summary of content (7 pages)

PAGE 1
DMP3010LK3 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits RDS(on) max • • • • • ID TA = 25°C 8mΩ @ VGS = -10V -17A 10.2mΩ @ VGS = -4.5V -14.5A -30V Mechanical Data Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
PAGE 2
DMP3010LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = -10V TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<10s Continuous Drain Current (Note 4) VGS = -4.5V Steady State t<10s ID Value -30 ±20 -17.0 -13.0 ID -27.0 -21.0 A ID -14.5 -11.
PAGE 3
DMP3010LK3 30 30 VGS = -10V 25 VGS = -5.0V 20 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 VGS = -4.5V VGS = -3.5V VGS = -3.0V VGS = -2.5V 15 10 5 VDS = -5V 20 15 10 TA = 150°C TA = 125°C 5 VGS = -2.0V 0.5 1 1.5 2 2.5 3 3.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 4 0.020 0.016 0.012 0.008 VGS = -4.5V VGS = -10V 0.004 0 0 5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 30 1.6 1.4 1.
PAGE 4
DMP3010LK3 30 25 2.0 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.5 ID = -1mA 1.5 ID = -250µA 1.0 0.5 T A = 25°C 15 10 5 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.
PAGE 5
DMP3010LK3 80 700 Starting Temperature (TJ) = 25°C 70 EAS 500 60 50 400 IAS 40 300 30 200 20 100 IAS, AVALANCHE CURRENT (A) EAS, AVALANCHE ENERGY (mJ) 600 10 0 0.1 0.2 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INDUCTOR (mH) Fig. 13 Single-Pulse Avalanche Tested 0.3 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.50 D = 0.02 0.01 RθJA(t) = r(t) * RθJA RθJA = 72°C/W Duty Cycle, D = t1/ t2 D = 0.01 D = 0.005 D = Single Pulse 0.001 0.
PAGE 6
DMP3010LK3 Package Outline Dimensions E TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e 2.286 − − E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm A b3 c2 L3 A2 D E1 H L4 A1 L e 2X b2 3X b a Suggested Pad Layout X2 Y2 C Y1 X1 DMP3010LK3 Document number: DS35716 Rev.
PAGE 7
DMP3010LK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).