User Manual

DMP3010LK3
Document number: DS35716 Rev. 4 - 2
4 of 7
www.diodes.com
February 2012
© Diodes Incorporated
DMP3010LK3
0
0.5
1.0
1.5
2.0
2.5
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
-V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
I = -1mA
D
I = -250µA
D
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
0 4 8 121620
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
100
1,000
10,000
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
C
iss
C
rss
C
oss
f = 1MHz
0 5 10 15 20 25 30
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
100,000
-I , LEAKA
G
E
C
U
R
R
E
N
T
(nA)
DSS
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 20406080100120140
Q , OTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
g
T
0
2
4
6
8
10
-V , A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E(V)
GS
G
V = -15V
I = -10A
DS
D
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
P
,
P
EAK
T
R
A
N
SIE
N
T
P
O
WE
R
(W)
(pk)
Single Pulse
R = 72°C/W
θ JA
R (t) = r(t) * R
= P * R
θθ
θ
JA JA
JA JA
T - T