Instruction Manual

DMP3028LSD
Document number: DS35966 Rev. 3 - 2
2 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMP3028LSD
ADVANCED INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-6
-4.7
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
-7.4
-5.8
A
Maximum Body Diode Forward Current (Note 6)
I
S
-2.5 A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
I
DM
-30 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.3
W
T
A
= +70°C
0.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
Θ
JA
102
°C/W
t<10s 61
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.7
W
T
A
= +70°C
1.1
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
Θ
JA
75
°C/W
t<10s 50
Thermal Resistance, Junction to Case (Note 6)
R
Θ
JC
14.5
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS
— —
-1 µA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— —
±100 nA
V
GS
=±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1 — -3 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
—
20 25
mΩ
V
GS
= -10V, I
D
= -7A
—
29 38
V
GS
= -4.5V, I
D
= -5.5A
Forward Transfer Admittance
|Y
fs
|
—
11 — S
V
DS
= -5V, I
D
= -7A
Diode Forward Voltage
V
SD
—
0.7 1.2 V
V
GS
= 0V, I
S
= -2.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
1241
—
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
—
147
—
Reverse Transfer Capacitance
C
rss
—
110
—
Gate Resistance
R
G
—
15
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
—
22
—
nC
V
DS
= -15V, I
D
= -7A
Total Gate Charge (V
GS
= -10V) Q
g
—
10.9
—
Gate-Source Charge
Q
gs
—
3.5
—
Gate-Drain Charge
Q
gd
—
4.7
—
Turn-On Delay Time
t
D(on)
—
9.7
—
nS
V
GS
= -10V, V
DD
= -15V, R
GEN
= 6Ω,
I
D
= -7A
Turn-On Rise Time
t
r
—
17.1
—
Turn-Off Delay Time
t
D(off)
—
60.5
—
Turn-Off Fall Time
t
f
—
40.4
—
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.