User guide

DMP3035LSS
Document number: DS31443 Rev. 6 - 2
2 of 5
www.diodes.com
August 2009
© Diodes Incorporated
DMP3035LSS
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-30
⎯ ⎯
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
-1
μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
⎯
⎯
±100
±800
nA
V
GS
= ±20V, V
DS
= 0V
V
GS
= ±25V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS
(
th
)
-1
⎯
-2 V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
11
15
27
14
18
36
mΩ
V
GS
= -20V, I
D
= -11A
V
GS
= -10V, I
D
= -8A
V
GS
= -4.5V, I
D
= -5A
Forward Transconductance
g
fs
⎯
12
⎯
S
V
DS
= -10V, I
D
= -12A
Diode Forward Voltage (Note 5)
V
SD
-0.5
⎯
-1.1 V
V
GS
= 0V, I
S
= -2A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
1655
⎯
pF
V
DS
= -20V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
286
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
240
⎯
pF
Gate Resistance
R
G
⎯
2.3
⎯ Ω V
GS
= 0V, V
DS
= 0V, f = MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
g
⎯
15.3
30.7
⎯
nC
V
DS
= -15V, V
GS
= -4.5V, I
D
= -8A
V
DS
= -15V, V
GS
= -10V, I
D
= -8A
Gate-Source Charge
Q
g
s
⎯
3.5
⎯ V
DS
= -15V, V
GS
= -10V, I
D
= -8A
Gate-Drain Charge
Q
g
d
⎯
7.9
⎯ V
DS
= -15V, V
GS
= -10V, I
D
= -8A
Turn-On Delay Time
t
d
(
on
)
⎯
5.1
⎯
ns
V
GS
= -10V, V
DS
= -15V,
R
D
= 15Ω, R
G
= 6Ω
Rise Time
t
r
⎯
8
⎯
Turn-Off Delay Time
t
d
(
off
)
⎯
46
⎯
Fall Time
t
f
⎯
30
⎯
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Fig. 1 Typical Output Characteristic
0
4
8
12
16
20
012345
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = -1.5V
GS
V = -2.0V
GS
V = -2.5V
GS
V = -3.0V
GS
V = -4.0V
GS
V = -10V
GS
Fig. 2 Typical Transfer Characteristic
0
4
8
12
16
20
1 1.5 2 2.5 3 3.5
-V , GATE-SOURCE VOLTAGE (V)
GS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A