Instruction Manual

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DMP3056LDM

Document number: DS31449 Rev. 11 - 2

1 of 6

www.diodes.com

December 2012

DMP3056LDM

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on) max

= 25°C

-30V

45mΩ @ V

= -10V

-4.3A

65mΩ @ V

= -4.5V

-3.3A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• General Purpose Interfacing Switch

• Power Management Functions

• Analog Switch

Features

• Low Gate Threshold Voltage

• Low On-Resistance

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT26

• Case Material – Molded Plastic, “Green” Molding Compound.

UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number Qualification Case Packaging

DMP3056LDM-7 Commercial SOT26 3000/Tape & Reel

DMP3056LDMQ-7 Automotive SOT26 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT26

Top View

Internal Schematic

DMA = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

DMA

Summary of content (6 pages)

PAGE 1
DMP3056LDM P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(on) max -30V 45mΩ @ VGS = -10V 65mΩ @ VGS = -4.5V • • • • • ID TA = 25°C -4.3A -3.3A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data • • Case: SOT26 Case Material – Molded Plastic, “Green” Molding Compound.
PAGE 2
DMP3056LDM Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ID ID IS IDM Drain-Source Voltage Gate-Source Voltage Steady State t < 10s Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%) TA = +25°C TA = +25°C Continuous Drain Current (Note 6) VGS = 10V Value -30 ±20 -4.3 -5.8 -2.3 -13 Units V V A A A A Value 1.25 100 1.5 86 15.
PAGE 3
DMP3056LDM 10 12 11 9 VGS = -10V 9 VGS = -4.5V 8 7 6 5 4 VGS = -3.0V 3 VGS = -1.5V VGS = -1.0V 2 1 7 6 5 4 TA = 150°C TA = 125°C 3 TA = 85°C 2 VGS = -2.5V TA = 25°C TA = -55°C 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 1 1.5 2 2.5 3 3.5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VGS = -4.5V VGS = -10V 0.04 0.03 1 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs.
PAGE 4
DMP3056LDM 1.7 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 10 -IS, SOURCE CURRENT (A) 1 0.1 TA = 150°C TA = 125°C 0.01 TA = 85°C T A = 25°C 0.001 TA = -55°C 0.2 0.4 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage VGS, GATE-SOURCE VOLTAGE (V) 10 -ID, DRAIN CURRENT (A) VGS = -10V ID = -10A 0.9 VGS = -4.5V ID = -5A 0.
PAGE 5
DMP3056LDM r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 RθJA(t) = r(t) * RθJA RθJA = 96°C/W D = 0.05 D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
PAGE 6
DMP3056LDM IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).