Instruction Manual

DMP3056LDM
Document number: DS31449 Rev. 11 - 2
2 of 6
www.diodes.com
December 2012
© Diodes Incorporated
DMP3056LDM
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-30 V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady State
T
A
= +25°CI
D
-4.3 A
t < 10s
T
A
= +25°CI
D
-5.8 A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
-2.3 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
-13 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C P
D
1.25 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θ
JA
100 °C/W
Total Power Dissipation (Note 6)
T
A
= +25°C P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θ
JA
86
°C/W
Thermal Resistance, Junction to Case
R
θ
JC
15.6
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
STATIC PARAMETERS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-30
⎯ ⎯
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
⎯ ⎯
-1
μA
V
GS
= 0V, V
DS
= -30V
Gate-Body Leakage Current
I
GSS
⎯ ⎯
±100
±800
nA
V
GS
= ±20V, V
DS
= 0V
V
GS
= ±25V, V
DS
= 0V
Gate Threshold Voltage
V
GS
(
th
)
-1.0
⎯
-2.1 V
V
GS
= V
DS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
45
65
mΩ
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -4.2A
Forward Transconductance
g
FS
⎯
8
⎯
S
V
DS
= -10V, I
D
= -4.3A
Diode Forward Voltage
V
SD
⎯ ⎯
-1.2 V
V
GS
= 0V, I
S
= -1.7A
DYNAMIC PARAMETERS (Note 8)
Input Capacitance
C
iss
⎯
948
⎯
pF
V
GS
= 0V, V
DS
= -25V,
f = 1.0MHz
Output Capacitance
C
oss
⎯
105
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
100
⎯
pF
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Q
G
⎯
10.1
⎯
nC
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -6A
Q
G
⎯
21.1
⎯
nC
V
DS
= -15V, V
GS
= -10V,
I
D
= -6A
Gate-Source Charge
Q
GS
⎯
2.8
⎯
Gate-Drain Charge
Q
GD
⎯
3.2
⎯
Gate Resistance
R
g
⎯
13.15
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Turn-On Delay Time
t
d
(
on
)
⎯
10.2
⎯
ns
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0Ω
Rise Time
t
r
⎯
6.6
⎯
Turn-Off Delay Time
t
d
(
off
)
⎯
50.1
⎯
Fall Time
t
f
⎯
22.3
⎯
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6.
Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.