User Manual

DMP3085LSS
Document number: DS36165 Rev. 2 - 2
4 of 6
www.diodes.com
May 2013
© Diodes Incorporated
DMP3085LSS
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
ATE T
H
R
ES
H
O
LD V
O
LTA
G
E (V)
GS(TH)
0
0.8
1.6
2.4
-50 -25 0 25 50 75 100 125 150
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I , S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
0
4
8
12
16
20
0 0.3 0.6 0.9 1.2 1.5
T= 25°C
A
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E (
p
F
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
10
100
1000
0 5 10 15 20 25 30
C
oss
C
rss
f = 1MHz
C
iss
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Drain-Source Leakage Current vs. Voltage
DS
-I , LEAKA
G
E
C
U
R
R
E
N
T
(nA)
DSS
0.1
1
10
100
1000
10000
0
5
10 15 20 25 30
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
0
1
2
3
4
5
6
7
8
9
10
024681012
V = -15V
I = -3.8A
DS
D