Owner manual

ManualsBrandsDiodes ManualsHardwareDMP32D4SW

DMP32D4SW

Document number: DS35823 Rev. 3 - 2

1 of 6

www.diodes.com

March 2013

DMP32D4SW

ADVANCE INFORMATION

NEW PRODUCT

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(on)

Max

@ T

= 25C

-30V

2.4 @ V

= -10V

-250mA

4 @ V

= -4.5V

-200mA

Description

This MOSFET has been designed to minimize the on-state resistance

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

 Load Switch

 Portable Applications

 Power Management Functions

Features

 Low On-Resistance

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT323

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

 Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Product Marking Reel size (inches) Quantity per reel

DMP32D4SW-7 P32D 7 3,000

DMP32D4SW-13 P32D 13 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ESD PROTECTED

Top View

Pin-out

P32D = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Z = 2012)

M = Month (ex: 9 = September)

Source

Gate

Protection

Diode

Gate

Drain

Equivalent Circuit

P32D

SOT323

Summary of content (6 pages)

PAGE 1
DMP32D4SW 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(on) Max -30V 2.4 @ VGS = -10V 4 @ VGS = -4.5V  ID Max @ TA = 25C -250mA -200mA Low On-Resistance  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
PAGE 2
DMP32D4SW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ADVANCE INFORMATION NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V TA = +25°C TA = +70°C Value -30 ±20 250 200 -1 ID Pulsed Drain Current (Note 6) IDM Unit V V mA A Thermal Characteristics (@TA = +25°C, unless otherwise specified.
PAGE 3
DMP32D4SW 2.0 2.0 1.8 VGS = -10V 1.0 VGS = -3.5V 0.5 1.2 1.0 0.8 0.6 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.8 VGS = -2.5V 0.6 0.5 0.4 VGS = -4.5V 0.3 0.2 0.1 0 0.5 1.0 1.5 2.0 2.5 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 0.9 0.7 3.0 T A = 85C TA = 25 C T A = -55C 0 1 2 3 4 -VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 1.5 ID = -0.5A 1.2 ID = -0.3A 0.
PAGE 4
2.6 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 1.5 1.2 0.9 VGS = -4.5V ID = -500mA 0.6 VGS = -10V ID = -1.0A 0.3 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 2.4 2.2 -ID = 1mA 2.0 1.8 -ID = 250µA 1.6 1.4 1.2 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 2.0 f = 1MHz CT, JUNCTION CAPACITANCE (pF) 1.
PAGE 5
DMP32D4SW Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ADVANCE INFORMATION NEW PRODUCT A SOT323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 0.95 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8°  All Dimensions in mm B C G H K M J L D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
PAGE 6
DMP32D4SW IMPORTANT NOTICE ADVANCE INFORMATION NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).