Owner's manual

DMP4015SK3Q
Document number: DS36665 Rev. 12- 2
4 of 7
www.diodes.com
December 2013
© Diodes Incorporated
DMP4015SK3Q
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
-V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
0
0.4
0.8
1.2
1.6
2
2.4
-I , SOURCE CURRENT (A)
S
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0 0.2 0.4 0.6 0.8 1 1.2 1.4
0
5
10
15
20
25
30
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
C
ISS
C
OSS
C
RSS
10
100
1000
0 5 10 15 20 25 30
f = 1MHz
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
-I , LEAKA
G
E
C
U
R
R
E
N
T
(nA)
DSS
0.1
1
10
100
1000
10000
0 5 10 15 20 25 30
T =150°C
A
T =125°C
A
T =85°C
A
T =25°C
A
0
2
4
6
8
10
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
V , GATE-SOURCE VOLTAGE (V)
GS
020406080100120
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
P
,
P
EAK
T
R
A
N
SIE
N
T
P
O
WE
R
(W)
(pk)
Single Pulse
R = 72°C/W
θ JA
R (t) = r(t) * R
= P * R
θθ
θ
JA JA
JA JA
T - T