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DMP4047LFDE

atasheet number: DS35777 Rev. 5 - 2

1 of 6

www.diodes.com

July 2012

DMP4047LFDE

ADVANCE INFORMATION

40V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON) max

Package

D max

= +25°C

-40V

33mΩ @ V

= -10V

U-DFN2020-6

Type E

-6A

50m @ V

= -4.5V

-4.9A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

• General Purpose Interfacing Switch

• Load Switching

• Battery Management Application

• Power Management Functions

Features

• 0.6mm profile – ideal for low profile applications

• PCB footprint of 4mm

• Low Gate Threshold Voltage

• Low On-Resistance

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-DFN2020-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0065 grams (approximate)

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Quantity per reel

DMP4047LFDE-7 PE 7 3,000

DMP4047LFDE-13 PE 13 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

U-DFN2020-6 Type E

Bottom View

Pin Out

PE = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

Equivalent Circuit

Bottom View

Pin1

Summary of content (6 pages)

PAGE 1
DMP4047LFDE 40V P-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS -40V Features Package 33mΩ @ VGS = -10V U-DFN2020-6 Type E 50mΩ @ VGS = -4.5V • • • • • • • ID max TA = +25°C RDS(ON) max -6A -4.9A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • 0.
PAGE 2
DMP4047LFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<5s Continuous Drain Current (Note 6) VGS = 10V Steady State t<5s ID Value -40 ±20 -3.3 -2.6 ID -5.3 -4.2 A ID -6.0 -4.8 A A -9.5 -7.
PAGE 3
DMP4047LFDE 30 30 VGS = -10V VGS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 20 VGS = -4.0V VGS = -3.5V 15 10 VDS = -5.0V 25 VGS = -4.5V VGS = -3.0V 20 15 10 T A = 150 °C 5 5 TA = 125°C VGS = -2.5V VGS = -2.0V 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 0.15 0.12 0.09 VGS = -2.5V 0.06 VGS = -4.5V 0.
PAGE 4
2.0 -VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.08 0.06 VGS = -4.5V ID = -5A 0.04 VGS = -10V ID = -10A 0.02 1.8 -ID = 1mA 1.6 1.4 -ID = 250µA 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs.
PAGE 5
DMP4047LFDE D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 186°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 100 1,000 Package Outline Dimensions A1 A U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 — — 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.
PAGE 6
DMP4047LFDE ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).