User Manual

ManualsBrandsDiodes ManualsHardwareDMP56D0UFB

DMP56D0UFB

Document number: DS36175 Rev. 2 - 2

1 of 5

www.diodes.com

June 2013

DMP56D0UFB

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

= +25°C

-50V

6 @ V

= -4 V

-200mA

8 @ V

= -2.5V

-160mA

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

 DC-DC Converters

 Power Management Functions

 Battery Operated Systems and Solid-State Relays

Features and Benefits

 Low On-Resistance

 ESD Protected Gate

 Low Input/Output Leakage

 Fast Switching Speed

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: X1-DFN1006-3

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  NiPdAu over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.001 grams (approximate)

Ordering Information (Note 4)

Part Number

Case Packaging

DMP56D0UFB-7 X1-DFN1006-3

3000/Tape & Reel

DMP56D0UFB-7B X1-DFN1006-3 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

X-DFN1006-3

Equivalent Circuit

Top View

Internal Schematic

Bottom View

Source

Gate

Protection

Diode

Gate

Drai

Body

Diode

D3 = Product Type Marking Code

DMP56D0UFB-7 DMP56D0UFB-7B

Top View

Bar Denotes Gate

and Source Side

Top View

Dot Denotes

Drain Side

ESD PROTECTED

D3 D3



Green

Summary of content (5 pages)

PAGE 1
DMP56D0UFB Green Product Summary P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V(BR)DSS RDS(ON) -50V 6Ω @ VGS = -4 V 8Ω @ VGS = -2.5V ID TA = +25°C -200mA -160mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching  Low On-Resistance  ESD Protected Gate  Low Input/Output Leakage  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
PAGE 2
DMP56D0UFB Maximum Ratings (@TA = +25°C, unless otherwise specified.
PAGE 3
DMP56D0UFB 0.4 0.8 VGS = 4.5V VDS = -5V T A = 125°C TA = 25°C 0.6 -ID, DRAIN CURRENT (A) VGS = 8.0V -ID, DRAIN CURRENT (A) TA = -55°C VGS = 2.5V VGS = 4.0V VGS = 1.8V 0.4 VGS = 1.5V 0.2 T A = 150°C 0.3 TA = 85°C 0.2 0.1 VGS = 1.2V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 8 7 6 VGS = -2.5V VGS = -4.0V 5 VGS = -8.0V 4 VGS = -4.5V 3 2 0 0.1 0.2 0.
PAGE 4
DMP56D0UFB 1.5 1 0.8 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 150°C 1 ID = -1mA ID = -250µA 0.5 0 -50 TA = 125°C 0.6 TA = 25°C 0.4 T A = -55°C 0.2 0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature -25 100 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs.
PAGE 5
DMP56D0UFB Suggested Pad Layout C X1 X Dimensions Z G1 G2 X X1 Y C G2 G1 Y Z Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).