Instruction Manual

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DMP56D0UV

Document number: DS36174 Rev. 2 - 2

1 of 5

www.diodes.com

June 2013

DMP56D0UV

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

DS(ON)

= +25°C

-50V

6Ω @ V

= -4 V

-160mA

8Ω @ V

= -2.5V

-120mA

Descriptions

This new generation MOSFET has been designed to minimize the

on-state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Applications

 DC-DC Converters

 Power Management Functions

 Battery Operated Systems and Solid-State Relays

Features and Benefits

 Low On-Resistance

 ESD Protected Gate

 Low Input Capacitance

 Fast Switching Speed

 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT563

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020D

 Terminals: Finish  Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

 Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMP56D0UV -7 SOT563 3000/Tape & Reel

DMP56D0UV -13 SOT563 10000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT563

TOP VIEW

Internal Schematic

KD3 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

ESD PROTECTE



Green

Summary of content (5 pages)

PAGE 1
DMP56D0UV Green DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(ON) -50V 6Ω @ VGS = -4 V 8Ω @ VGS = -2.5V ID TA = +25°C -160mA -120mA Descriptions This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching  Low On-Resistance  ESD Protected Gate  Low Input Capacitance  Fast Switching Speed  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
PAGE 2
DMP56D0UV Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Continuous Pulsed Drain Current (10µs pulse, duty cycle = 1%) Thermal Characteristics Symbol VDSS VGSS ID IDM Units V V mA mA Value 400 313 -55 to +150 Units mW C/W C (@TA = +25°C, unless otherwise specified.
PAGE 3
DMP56D0UV 0.8 0.4 VGS = 4.5V VDS = -5V T A = 125°C TA = 25°C 0.6 -ID, DRAIN CURRENT (A) VGS = 8.0V -ID, DRAIN CURRENT (A) TA = -55°C VGS = 2.5V VGS = 4.0V VGS = 1.8V 0.4 VGS = 1.5V 0.2 T A = 150°C 0.3 TA = 85°C 0.2 0.1 VGS = 1.2V 0 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.5 5 1 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 8 7 6 VGS = -2.5V VGS = -4.0V 5 VGS = -8.0V 4 VGS = -4.5V 3 2 0 0.1 0.
PAGE 4
DMP56D0UV 1.5 1 0.8 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) T A = 150°C 1 ID = -1mA ID = -250µA 0.5 0 -50 TA = 125°C 0.6 TA = 25°C 0.4 T A = -55°C 0.2 0 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature -25 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs.
PAGE 5
DMP56D0UV Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C 1.7 E 0.5 C1 G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).