User guide

DMS2095LFDB
Document number: DS35955 Rev. 3 - 2
5 of 7
www.diodes.com
April 2014
© Diodes Incorporated
DMS2095LFDB
NEW PRODUCT
MOSFET Characteristics (cont.)
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
TE TH
R
ESH
O
LD V
O
LT
A
G
E (V)
GS(TH)
0
0.2
0.4
0.6
0.8
1
-50 -25 0 25 50 75 100 125 150
-I = 1mA
D
-I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
I, SO
U
R
C
E
C
U
R
R
E
N
T (A)
S
0
1
2
3
4
5
6
7
8
9
10
0 0.3 0.6 0.9 1.2 1.5
T= 85C
A
°
T= 125C
A
°
T= 150C
A
°
T= -55C
A
°
T= 25C
A
°
C , JUNCTION CAPACITANCE (pF)
T
V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
10
100
1000
10000
0 2 4 6 8 101214 161820
f = 1MHz
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
g
V,
G
A
T
E
-
S
O
U
R
C
E
V
O
L
T
A
G
E
(V)
GS
0
1
2
3
4
5
6
7
8
9
10
0 3 6 9 12 15
V = -10V
I= -2.5A
DS
D
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
r(t), T
R
AN
S
I
E
NT T
H
E
R
M
AL
R
E
S
I
S
TAN
C
E
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
R (t) = r(t) * R
R = 155°C/W
Duty Cycle, D = t1/ t2
θθ
θ
JA JA
JA
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000