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DMS2120LFWB

Document number: DS31667 Rev. 5 - 2

1 of 7

www.diodes.com

September 2012

DMS2120LFWB

NEW PRODUCT

P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR

SUPER BARRIER RECTIFIER

Features

• Low On-Resistance

• 95mΩ @V

= -4.5V

• 120mΩ @V

= -2.5V

• 150mΩ (typ) @V

= -1.8V

• Low Gate Threshold Voltage, -1.3V Max

• Fast Switching Speed

• Low Input/Output Leakage

• Incorporates Low V

Super Barrier Rectifier (SBR)

• Low Profile, 0.5mm Max Height

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-DFN3020-8 Type B

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.011 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMS2120LFWB-7 DFN3020B-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Bottom View

Pin Configurat

ion

Top View

Bottom View

MF = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

U-DFN3020-8

Type B

Equivalent Circuit

Summary of content (7 pages)

PAGE 1
DMS2120LFWB NEW PRODUCT P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR® SUPER BARRIER RECTIFIER Features Mechanical Data • • • • • • • • • • • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V • 150mΩ (typ) @VGS = -1.8V Low Gate Threshold Voltage, -1.3V Max Fast Switching Speed Low Input/Output Leakage Incorporates Low VF Super Barrier Rectifier (SBR) Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
PAGE 2
DMS2120LFWB NEW PRODUCT Maximum Ratings – TOTAL DEVICE (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 1.5 85 -55 to +150 Unit W °C/W °C Maximum Ratings – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.
PAGE 3
DMS2120LFWB Q1, P-CHANNEL MOSFET 10 10 VGS = -8.0V VDS = -5V VGS = -4.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 8 VGS = -2.5V VGS = -2.0V 6 VGS = -1.5V 4 VGS = -1.0V 0 0 4 TA = 150°C VGS = -1.2V 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 0.1 0.06 VGS = -2.5V VGS = -4.5V 0.04 0.02 0 0 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.12 0.1 VGS = -2.5V ID = -2A VGS = -4.5V ID = -5A 1.
PAGE 4
DMS2120LFWB 10,000 1 -VGS(TH), GATE THRESHOLD VOLTAGE (V) C, CAPACITANCE (pF) 1,000 Ciss 100 Coss Crss 10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Capacitance 20 0.9 0.8 0.7 0.6 ID = -1mA 0.5 ID = -250µA 0.4 0.3 0.2 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature 10 -IS, SOURCE CURRENT (A) NEW PRODUCT f = 1MHz 8 6 TA = 25°C 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig.
PAGE 5
DMS2120LFWB D1, SBR IF, INSTANTANEOUS FORWARD CURRENT (A) 0.7 PD, POWER DISSIPATION (W) 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 10 Forward Power Dissipation 0.1 TA = 125°C TA = 85°C 0.01 TA = 25°C 0.001 0.0001 0 TA = -55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig.
PAGE 6
DMS2120LFWB Package Outline Dimensions NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 A1 D D4 D4 D2 E E2 b Z e L U-DFN3020-8 Type B Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.
PAGE 7
DMS2120LFWB NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).