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DMS2220LFDB

Document number: DS31546 Rev. 9 - 2

1 of 7

www.diodes.com

January 2013

DMS2220LFDB

P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR

SUPER BARRIER RECTIFIER

Features

• Low On-Resistance

• 95mΩ @V

= -4.5V

• 120mΩ @V

= -2.5V

• 86mΩ (typ) @V

= -1.8V

• Low Gate Threshold Voltage, -1.3V Max

• Fast Switching Speed

• Low Input/Output Leakage

• Incorporates Low V

Super Barrier Rectifier (SBR)

• Low Profile, 0.5mm Max Height

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-DFN2020-6 Type B

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0065 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMS2220LFDB-7 U-DFN2020-6 Type B 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

U-DFN2020-6

Type B

Bottom View

Top View

Internal Schematic

123

456

ANCD

Bottom View

Pin Configuration

ME = Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

Dot denotes Pin 1

Summary of content (7 pages)

PAGE 1
DMS2220LFDB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR® SUPER BARRIER RECTIFIER Features Mechanical Data • • • • • • • • • • • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V • 86mΩ (typ) @VGS = -1.8V Low Gate Threshold Voltage, -1.3V Max Fast Switching Speed Low Input/Output Leakage Incorporates Low VF Super Barrier Rectifier (SBR) Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
PAGE 2
DMS2220LFDB Maximum Ratings – TOTAL DEVICE (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 1.4 89 -55 to +150 Unit W °C/W °C Maximum Ratings – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Pulsed Drain Current (Note 6) Symbol VDSS VGSS ID IDM Value -20 ±12 -3.
PAGE 3
DMS2220LFDB Q1 - P-CHANNEL MOSFET 10 10 VGS = -8.0V VDS = -5V VGS = -4.5V 8 VGS = -2.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 8 VGS = -2.0V 6 VGS = -1.5V 4 VGS = -1.0V 0 VGS = -1.2V 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 0.5 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA = 150°C 0.12 0.1 0.08 VGS = -1.8V 0.06 VGS = -2.5V VGS = -4.5V 0.04 0.02 0 0 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig.
PAGE 4
DMS2220LFDB 10,000 1 -VGS(TH), GATE THRESHOLD VOLTAGE (V) C, CAPACITANCE (pF) f = 1MHz 1,000 Ciss 100 Coss Crss 10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Capacitance 20 0.9 0.8 0.7 0.6 ID = -1mA 0.5 ID = -250µA 0.4 0.3 0.2 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature -IS, SOURCE CURRENT (A) 10 8 6 TA = 25°C 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig.
PAGE 5
DMS2220LFDB D1 - SBR IF, INSTANTANEOUS FORWARD CURRENT (A) 0.7 PD, POWER DISSIPATION (W) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 11 Forward Power Dissipation TA = 150°C 0.1 TA = 85°C 0.01 TA = 25°C 0.001 0.0001 0 TA = -55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 12 Typical Forward Characteristics TA = 150°C 1,000 T A = 125°C C, CAPACITANCE (pF) 100 1,000 TA = 85°C 10 1 TA = 25°C f = 1MHz 100 10 0.1 0.
PAGE 6
DMS2220LFDB Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 ⎯ ⎯ b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 ⎯ ⎯ D2 0.50 0.70 0.60 e 0.65 ⎯ ⎯ E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 ⎯ ⎯ L 0.25 0.35 0.30 z 0.225 ⎯ ⎯ All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.
PAGE 7
DMS2220LFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).