User Manual

SBR is a registered trademark of Diodes Incorporated.
DMS2220LFDB
Document number: DS31546 Rev. 9 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
DMS2220LFDB
10
100
1,000
10,000
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
048121620
Fig. 7 Typical Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
f = 1MHz
C
iss
C
oss
C
rss
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-V ,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
I = -250µA
D
I = -1mA
D
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Diode Forward Voltage vs. Current
0
2
4
6
8
10
-I , S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T = 25°C
A
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ JA
R
R = 146°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0.9
Fig. 10 Transient Thermal Response
t , PULSE DURATION TIME (s)
1