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DRDNB21D

Document number: DS30756 Rev. 6 - 2

1 of 7

www.diodes.com

February 2011

DRDNB21D

COMPLEX ARRAY FOR DUAL RELAY DRIVER

Features and Benefits

• Epitaxial Planar Die Construction

• Two Pre-Biased Transistors and Two Switching Diodes,

Internally Connected in One Package

• Ideally Suited for Automated Assembly Processes

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

R1 = R3 = 2.2kΩ (nominal)

R2 = R4 = 47kΩ (nominal)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic. "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.0062 grams (approximate)

Ordering Information (Note 3)

Device Packaging Shipping

DRDNB21D-7 SOT-363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, visit our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016

Code S T U V W X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

RD08 = Product Type Marking Code

YM = Date Code Marking

Y = Year (e.g. T = 2006)

M = Month (e.g. 1 = January)

Q1 Q2

R2 R4

R3R1

Device Circuit

RD08

Summary of content (7 pages)

PAGE 1
DRDNB21D COMPLEX ARRAY FOR DUAL RELAY DRIVER Features and Benefits Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Two Pre-Biased Transistors and Two Switching Diodes, Internally Connected in One Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound.
PAGE 2
DRDNB21D Maximum Ratings, Total Device @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Air (Note 4) Operating and Storage Junction Temperature Range Symbol PD RθJA TJ, TSTG Value 200 625 -55 to +150 Unit mW °C/W °C Maximum Ratings, Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified Characteristic Collector-Emitter Voltage Base-Emitter Voltage Output Current Peak Collector Current Symbol VCC Vin IO ICM Value 50 -5 to +
PAGE 3
DRDNB21D Device Characteristics PD, POWER DISSIPATION (mW) 250 Note 4 200 150 100 50 0 120 40 80 160 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve (Total Device) 0 Pre-Biased NPN Transistor Elements 1,000 1 0.1 hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 TA = 75° C TA = -25°C TA = 25°C 0.01 0.001 0 10 40 20 30 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical VCE(SAT) vs. IC DRDNB21D Document number: DS30756 Rev. 6 - 2 50 3 of 7 www.
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DRDNB21D Pre-Biased NPN Transistor Elements - continued IC, COLLECTOR CURRENT (mA) 100 10 Vin, INPUT VOLTAGE (V) 10 1 0.1 1 0.01 0.001 0 1 8 9 10 6 7 3 4 5 Vin, INPUT VOLTAGE (V) Fig. 4 Typical Collector Current vs. Input Voltage 2 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Input Voltage vs. Collector Current 4 COB, CAPACITANCE (pF) IE = 0mA f = 1MHz 3 2 1 0 0 10 15 25 20 5 VR, REVERSE BIAS VOLTAGE (V) Fig.
PAGE 5
DRDNB21D 10,000 1,000 IR, INSTANTANEOUS REVERSE CURRENT (nA) IF, INSTANTANEOUS FORWARD CURRENT (mA) Switching Diode Elements 100 10 1 0.1 0 1,000 1.2 0.4 0.8 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 7 Typical Forward Characteristics 100 10 1 0.1 0 60 80 20 40 VR, REVERSE VOLTAGE (V) Fig. 8 Typical Reverse Characteristics 100 3.0 CT, TOTAL CAPACITANCE (pF) f = 1MHz 2.5 2.0 1.5 1.0 0.5 0 0 10 20 40 30 VR, REVERSE VOLTAGE (V) Fig. 9 Typical Capacitance vs.
PAGE 6
DRDNB21D Package Outline Dimensions A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DRDNB21D Document number: DS30756 Rev. 6 - 2 6 of 7 www.diodes.
PAGE 7
DRDNB21D IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.