Manual

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DSS2515M

Document number: DS31816 Rev. 3 - 2

1 of 5

www.diodes.com

January 2011

DSS2515M

15V LOW V

CE(sat)

NPN SURFACE MOUNT TRANSISTOR

Features

• Low Collector-Emitter Saturation Voltage, V

CE(sat)

• Ultra-Small Leadless Surface Mount Package

• ESD HBM SKV MM 400V

• Complementary PNP Type Available (DSS3515M)

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0009 grams (Approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DSS2515M-7 TA 7 8mm 3,000

DSS2515M-7B TA 7 8mm 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Bottom View

Top View

Device Schematic

Device Symbol

DFN1006-3

TA = Product Type Marking Code

TA TA

Top View

Dot Denotes Collector Side

DSS2515M-7

Top View

Denotes Base and Emitter Side

DSS2515M-7B

Summary of content (5 pages)

PAGE 1
DSS2515M 15V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD HBM SKV MM 400V Complementary PNP Type Available (DSS3515M) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) • • • Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound.
PAGE 2
DSS2515M Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IBM Value 15 15 6 500 1 100 Unit V V V mA A mA Symbol PD RθJA TJ, TSTG Value 250 500 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°
PAGE 3
DSS2515M Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 15 15 6 ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ Emitter Cutoff Current ON CHARACTERISTICS (Note 5) IEBO ⎯ ⎯ ⎯ ⎯ ⎯ 100 50 100 V V V nA μA nA DC Current Gain hFE 200 150 90 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 25 150 250 mV 500 1.1 0.
PAGE 4
DSS2515M VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 20 0.1 T A = 150°C TA = 125°C T A = 85°C TA = 25°C TA = -55°C 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 IC/IB = 20 1.0 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C 0.4 TA = 125°C T A = 150°C 0.2 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs.
PAGE 5
DSS2515M Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).