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DSS2540M

Document number: DS31820 Rev. 3 - 2

1 of 5

www.diodes.com

January 2011

DSS2540M

40V LOW V

CE(sat)

NPN SURFACE MOUNT TRANSISTOR

Features

• Low Collector-Emitter Saturation Voltage, V

CE(sat)

• Ultra-Small Leadless Surface Mount Package

• ESD: HBM 8kV, MM 400V

• Complementary PNP Type Available (DSS3540M)

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen, and Antimony Free. "Green" Device (Note 2)

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0009 grams (Approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DSS2540M-7 TC 7 8mm 3,000

DSS2540M-7B TC 7 8mm 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Bottom View

Top View

Device Schematic

DFN1006-3

Device Symbol

TC = Product Type Marking Code

TC TC

Top View

Dot Denotes Collector Side

DSS2540M-7

Top View

Denotes Base and Emitter Side

DSS2540M-7B

Summary of content (5 pages)

PAGE 1
DSS2540M 40V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary PNP Type Available (DSS3540M) “Lead Free”, RoHS Compliant (Note 1) Halogen, and Antimony Free. "Green" Device (Note 2) Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound.
PAGE 2
DSS2540M Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IBM Value 40 40 6 500 1 100 Unit V V V mA A mA Symbol PD RθJA TJ, TSTG Value 250 500 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°
PAGE 3
DSS2540M Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 40 40 6 ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ Emitter Cutoff Current ON CHARACTERISTICS (Note 5) IEBO ⎯ ⎯ ⎯ ⎯ ⎯ 100 50 100 V V V nA μA nA DC Current Gain hFE 200 150 50 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 50 100 200 250 mV 500 1.
PAGE 4
DSS2540M VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 20 0.1 TA = 150°C TA = 125°C T A = 85°C TA = 25°C TA = -55°C 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current IC/IB = 20 0.8 TA = -55°C 0.6 TA = 25°C T A = 85°C 0.4 T A = 125°C TA = 150°C 0.2 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current 1,000 1.0 IC/IB = 20 VCE = 2V 0.
PAGE 5
DSS2540M Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Y Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).