Owner's manual

ManualsBrandsDiodes ManualsHardwareDSS3540M

DSS3540M

Document number: DS31821 Rev. 2 - 2

1 of 5

www.diodes.com

January 2011

DSS3540M

40V LOW V

CE(sat)

PNP SURFACE MOUNT TRANSISTOR

Features

• Low Collector-Emitter Saturation Voltage, V

CE(sat)

• Ultra-Small Leadless Surface Mount Package

• ESD: HBM 8kV, MM 400V

• Complementary NPN Type Available (DSS2540M)

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free, "Green" Device (Note 2)

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0009 grams (Approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DSS3540M-7 TD 7 8mm 3,000

DSS3540M-7B TD 7 8mm 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Bottom View Top View

Device Schematic

DFN1006-3

Device Symbol

TD = Product Type Marking Code

TD TD

Top View

Dot Denotes Collector Side

DSS3540M-7

Top View

Denotes Base and Emitter Side

DSS3540M-7B

Summary of content (5 pages)

PAGE 1
DSS3540M 40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Leadless Surface Mount Package ESD: HBM 8kV, MM 400V Complementary NPN Type Available (DSS2540M) “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free, "Green" Device (Note 2) DFN1006-3 • • • Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound.
PAGE 2
DSS3540M Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IBM Value -40 -40 -6 -500 -1 -100 Unit V V V mA A mA Symbol PD RθJA TJ, TSTG Value 250 500 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 4) @ TA
PAGE 3
DSS3540M Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO -40 -40 -6 ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ Emitter Cutoff Current ON CHARACTERISTICS (Note 5) IEBO ⎯ ⎯ ⎯ ⎯ ⎯ -100 -50 -100 V V V nA μA nA DC Current Gain hFE 200 150 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -50 -130 -200 -350
PAGE 4
DSS3540M -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 20 0.1 T A = 150°C TA = 125°C T A = 85°C TA = 25°C T A = -55°C 0.01 0.1 1.2 IC/IB = 20 1.0 0.8 TA = -55°C 0.6 TA = 25°C T A = 85°C 0.4 TA = 125°C T A = 150°C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current 1,000 IC/IB = 20 VCE = -2V 1.
PAGE 5
DSS3540M Suggested Pad Layout C Dimensions Z G1 G2 X X1 Y C X1 X G2 G1 Y Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).