Owner's manual

DSS4160V
Document number: DS31671 Rev. 2 - 2
2 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS4160V
NEW PRODUCT
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
80
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 4)
V
(
BR
)
CEO
60
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
5
V
I
E
= 100μA, I
C
= 0
Collector Cutoff Current
I
CBO
100
50
nA
μA
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150°C
Collector Cutoff Current
I
CES
100 nA
V
CE
= 60V, V
BE
= 0
Emitter Cutoff Current
I
EBO
100 nA
V
EB
= 5V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
250
200
100
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 500mA
V
CE
= 5V, I
C
= 1A
Collector-Emitter Saturation Voltage
V
CE(SAT)
110
140
250
mV
I
C
= 100mA, I
B
= 1mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Collector-Emitter Saturation Resistance
R
CE
(
SAT
)
250 m
I
C
= 1A, I
B
= 100mA
Base-Emitter Saturation Voltage
V
BE
(
SAT
)
1.1 V
I
C
= 1A, I
B
= 50mA
Base-Emitter Turn On Voltage
V
BE
(
ON
)
0.9 V
V
CE
= 5V, I
C
= 1A
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
10 pF
V
CB
= 10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
150
MHz
V
CE
= 10V, I
C
= 50mA, f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time
t
on
68
ns
V
CC
= 10V
I
C
= 0.5A, I
B1
= I
B2
= 25mA
Delay Time
t
d
31
ns
Rise Time
t
r
37
ns
Turn-Off Time
t
off
430
ns
Storage Time
t
s
383
ns
Fall Time
t
f
47
ns
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
0
200
400
25 50
75 100 125
150
,
WE
DISSI
A
I
(mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 3)
A
600
0
R = 208°C/W
θ
JA
300
500
100
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
0.001
0.1
1
10
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
0.01
Pw = 100ms
Pw = 10ms
Pw = 1ms
DC