Instruction Manual

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DSS5160T

Document number: DS35532 Rev. 1 - 2

1 of 6

www.diodes.com

January 2012

DSS5160T

60V LOW V

CE(sat)

PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideal for Medium Power Amplification and Switching

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DSS5160T-7 ZP9 7 8mm 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

ZP9 = Product Type Marking Code

Top View

Device S

mbol Pin-Out To

SOT23

ZP9

Summary of content (6 pages)

PAGE 1
DSS5160T 60V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SOT23 Case Material: Molded Plastic, "Green” Molding Compound.
PAGE 2
DSS5160T Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Base Current (DC) Peak Base Current Symbol VCBO VCEO VEBO IC ICM IB IBM Value -80 -60 -5 -1 -2 -300 -1 Unit V V V A A mA A Value 725 172 79 -55 to +150 Unit mW °C/W °C/W °C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 5) Thermal Resistance, Jun
PAGE 3
DSS5160T Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Min -80 -60 -5 ⎯ ⎯ ⎯ 200 150 100 ⎯ ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ -100 -50 -100 ⎯ ⎯ ⎯ -175 -180 ⎯ ⎯ -340 RCE(sat) VBE(sat) VBE(on) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 340 -1.1 -0.
PAGE 4
DSS5160T 1 800 IC/IB = 10 VCE = -5V -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 700 600 TA = 150°C 500 TA = 85°C 400 T A = 25°C 300 200 TA = -55°C 0.1 TA = 150°C TA = 85°C TA = 25°C T A = -55°C 0.01 100 0 0.001 0.1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current 1.2 VCE = -5V 1.0 0.8 T A = -55°C 0.6 T A = 25°C 0.4 T A = 85°C 0.2 TA = 150°C 0 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig.
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DSS5160T Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X DSS5160T Document number: DS35532 Rev. 1 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.
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DSS5160T IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.