Manual

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DSS5540X

Document number: DS31653 Rev. 2 - 2

1 of 5

www.diodes.com

October 2010

DSS5540X

40V LOW V

CE(sat)

PNP SURFACE MOUNT TRANSISTOR

Features

• Ultra Low Collector-Emitter Saturation Voltage

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Weight: 0.055 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DSS5540X-13 ZPS54 13 12mm 2,500

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, please go to our website at http://www.diodes.com

Marking Information

Top View

Device Schematic Pin-Out Top

ZPS54 = Product Type Marking Code

= Manufacturer’s Code Marking

YWW = Date Code Marking

Y = Last digit of year (ex: 8 = 2008)

WW = Week code (01 – 53)

ZPS54

YWW

SOT89

Summary of content (5 pages)

PAGE 1
DSS5540X 40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Ultra Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) • • • Case: SOT89 Case Material: Molded Plastic, "Green” Molding Compound.
PAGE 2
DSS5540X Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Collector Current Repetitive Peak Pulse Collector Current (Note 4) Continuous Collector Current Peak Pulse Base Current Continuous Base Current Symbol VCBO VCEO VEBO ICM ICRP IC IBM IB Value -40 -40 -6 -10 -5 -4 -2 -1 Unit V V V A A A A A Value 0.9 139 2 62.
PAGE 3
DSS5540X Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 7) Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Collector-Base Cutoff Current ICBO Emitter-Base Cutoff Current IEBO DC Current Gain (Note 6) hFE Collector-Emitter Saturation Voltage (Note 7) VCE(sat) Equivalent On-Resistance RCE(sat) Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Turn-on Voltage Transition Frequen
PAGE 4
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) DSS5540X VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1 IC/IB = 10 0.1 T A = 150°C TA = 125°C 0.01 T A = 85°C T A = 25°C T A = -55°C 0.001 0.0001 VCE = -2V 0.8 T A = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 0.2 TA = 125°C T A = 150°C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig.
PAGE 5
DSS5540X Suggested Pad Layout X1 Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X2 (2x) Y1 Y3 Y4 Y2 Y C X (3x) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).