User Manual

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DSS8110Y

Document number: DS31679 Rev. 2 - 2

1 of 5

www.diodes.com

October 2010

DSS8110Y

100V LOW V

CE(sat)

NPN SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideal for Low Power Amplification and Switching

• Complementary PNP Type Available (DSS9110Y)

• Ultra Small Surface Mount Package

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free, "Green Device" (Note 2)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DSS8110Y-7 ZN5 7 8mm 3,000

Notes: 1. No purposefully added lead.

2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015

Code X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View Device Symbol

Pin-Out Top

SOT-363

ZN5 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: X = 2010)

M = Month (ex: 9 = September)

ZN5

CCE

CCB

Summary of content (5 pages)

PAGE 1
DSS8110Y 100V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Complementary PNP Type Available (DSS9110Y) Ultra Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free, "Green Device" (Note 2) • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound.
PAGE 2
DSS8110Y Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Base Current – Continuous Symbol VCBO VCEO VEBO IC ICM IB Value 120 100 5 1 3 0.
PAGE 3
DSS8110Y Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 120 100 5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 50 100 100 V V V nA μA nA nA 150 150 100 80 ⎯ ⎯ ⎯ ⎯ ⎯ 500 ⎯ ⎯ V ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 40 120 200 mV 200 1.05 0.
PAGE 4
DSS8110Y VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.1 TA = 150°C TA = 85°C TA = 125°C TA = 25°C T A = -55°C 0.01 0.0001 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 VCE = 10V 1.0 0.8 TA = -55°C 0.6 T A = 25°C 0.4 T A = 85°C TA = 125°C 0.2 TA = 150°C 0 0.0001 0.001 0.01 0.
PAGE 5
DSS8110Y Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).