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DST847BDJ

Document number: DS32035 Rev. 1 - 2

1 of 5

www.diodes.com

January 2010

DST847BDJ

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• “Green” Device (Note 2)

• Ultra Small Package

Mechanical Data

• Case: SOT-963

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.0027 grams (approximate)

Ordering Information

Device Packaging Shipping

DST847BDJ-7 SOT-963 10,000/Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

Marking Information

Device SchematicTop View

SOT-963

TA = Product Type Marking Code

Summary of content (5 pages)

PAGE 1
DST847BDJ DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) “Green” Device (Note 2) Ultra Small Package • • • Case: SOT-963 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
PAGE 2
DST847BDJ Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3) Symbol VCBO VCEO VEBO IC Value 50 45 6.0 100 Unit V V V mA Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C 3.
PAGE 3
DST847BDJ Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO Collector-Base Cutoff Current ICBO DC Current Gain hFE Min 50 50 45 6 Typical 150 Max 150 65 8.
PAGE 4
DST847BDJ 0.20 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.18 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.16 0.14 0.12 0.10 T A = 150°C 0.08 TA = 100°C 0.06 0.04 TA = 25°C 0.1 IC/IB = 50 IC/IB = 20 IC/IB = 10 TA = -55°C 0.02 0.01 0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1 VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) IC/IB = 100 1.0 VCE = 5V 0.
PAGE 5
DST847BDJ Suggest Pad Layout C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).