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DST847BPDP6

Document number: DS32036 Rev. 1 - 2

1 of 8

www.diodes.com

January 2010

DST847BPDP6

COMPLEMENTARY DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• “Green” Device (Note 2)

• Ultra Small Package

Mechanical Data

• Case: SOT-963

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.0027 grams (approximate)

Ordering Information

Device Packaging Shipping

DST847BPDP6-7 SOT-963 10,000/Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

Marking Information

Device SchematicTop View

SOT-963

TC = Product Type Marking Code

Summary of content (8 pages)

PAGE 1
DST847BPDP6 COMPLEMENTARY DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) “Green” Device (Note 2) Ultra Small Package Case: SOT-963 Case Material: Molded Plastic, “Green” Molding Compound.
PAGE 2
DST847BPDP6 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3) Symbol VCBO VCEO VEBO IC Value 50(-50) 45(-45) 6.0(-5.
PAGE 3
DST847BPDP6 Electrical Characteristics – Q1 NPN Transistor @TA = 25°C unless otherwise specified Characteristic (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Symbol V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO Min 50 50 45 6 Typical 150 150 65 8.
PAGE 4
DST847BPDP6 Typical Characteristics – Q1 NPN Transistor 0.16 IB = 1.8mA 450 IB = 2mA VCE = 5V IB = 1.6mA 0.14 400 IC, COLLECTOR CURRENT (A) IB = 1.4mA IB = 1.2mA IB = 1mA 0.10 IB = 0.8mA IB = 0.6mA 0.08 IB = 0.4mA 0.06 0.04 IB = 0.2mA TA = 100°C 300 250 TA = 25°C 200 150 T A = -55°C 100 0.02 0 TA = 150°C 350 hFE, DC CURRENT GAIN 0.12 50 0 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs.
PAGE 5
DST847BPDP6 Electrical Characteristics – Q2 PNP Transistor @TA = 25°C unless otherwise specified Characteristic (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage ICBO - Typical -100 -90 -65 -8.
PAGE 6
DST847BPDP6 Typical Characteristics – Q2 PNP Transistor 0.18 1,000 IB = -2mA IB = -1.2mA 0.12 T A = 125°C TA = 85°C IB = -1.4mA IB = -1mA IB = -0.8mA 0.10 IB = -0.6mA 0.08 IB = -0.4mA 0.06 0.04 hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (A) IB = -1.6mA 0.14 VCE = 5V T A = 150°C IB = -1.8mA 0.16 TA = 25°C TA = -55°C 100 IB = -0.2mA 0.02 0 0 10 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (A) Fig. 11 Typical DC Current Gain vs.
PAGE 7
DST847BPDP6 Package Outline Dimensions D e1 L E E1 e b (6 places) c A SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 C 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm A1 Suggest Pad Layout C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) DST847BPDP6 Document number: DS32036 Rev. 1 - 2 7 of 8 www.diodes.
PAGE 8
DST847BPDP6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).