Manual

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DST857BDJ

Document number: DS32037 Rev. 1 - 2

1 of 5

www.diodes.com

January 2010

DST857BDJ

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Complementary NPN Type Available (DST847BDJ)

• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)

• “Green” Device (Note 2)

• Ultra Small Package

Mechanical Data

• Case: SOT-963

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.0027 grams (approximate)

Ordering Information

Device Packaging Shipping

DST857BDJ-7 SOT-963 10,000/Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

Marking Information

Device SchematicTop View

SOT-963

TB = Product Type Marking Code

Summary of content (5 pages)

PAGE 1
DST857BDJ DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Complementary NPN Type Available (DST847BDJ) Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) “Green” Device (Note 2) Ultra Small Package Case: SOT-963 Case Material: Molded Plastic, “Green” Molding Compound.
PAGE 2
DST857BDJ Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3) Symbol VCBO VCEO VEBO IC Value -50 -45 -5.0 -100 Unit V V V mA Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C 3.
PAGE 3
DST857BDJ Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Symbol V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ICBO hFE Min -50 -50 -45 -6 100 200 Typical -100 -90 -65 -8.
PAGE 4
DST857BDJ 1 1 IC/IB = 20 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 TA = 150°C 0.1 T A = 125°C T A = 85°C T A = 25°C TA = -55°C T A = 125°C TA = 85°C TA = 25°C TA = -55°C 0.01 0.1 0.01 0.1 1.0 1.2 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs.
PAGE 5
DST857BDJ Suggest Pad Layout C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).