Manual

Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-60
V
I
C
= -10μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-60
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.0
V
I
E
= -10μA, I
C
=0
Collector Cutoff Current
I
CBO
-10
nA
μA
V
CB
= -50V, I
E
= 0
V
CB
= -50V, I
E
= 0, T
A
= 150°C
Collector Cutoff Current
I
CEX
-50 nA
V
CE
= -30V, V
EB(OFF)
= -0.5V
Emitter Cutoff Current
I
EBO
-50 nA
V
EB
= -5V, I
C
= 0
Base Cutoff Current
I
BL
-50 nA
V
CE
= -30V, V
EB(OFF)
= -0.5V
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
75
100
100
100
50
300
I
C
= -100μA, V
CE
= -10V
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.4
-1.6
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
-1.3
-2.6
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
8.0 pF
V
CB
= -10V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
30 pF
V
EB
= -2.0V, f = 1.0MHz, I
C
= 0
Current Gain-Bandwidth Product
f
T
200
MHz
V
CE
= -20V, I
C
= -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time
t
on
45 ns
Delay Time
t
d
10 ns
Rise Time
t
r
40 ns
V
CC
= -30V, I
C
= -150mA,
I
B1
= -15mA
Turn-Off Time
t
off
100 ns
Storage Time
t
s
80 ns
Fall Time
t
f
30 ns
V
CC
= -6.0V, I
C
= -150mA,
I
B1
=I
B2
= -15mA
NEW PRODUCT
Notes: 4. Short duration pulse test used to minimize self-heating effect.
0
0.4
0.2
0.6
0.8
1.0
0
25
50
75 100 125
150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
A
-I , COLLECTOR CURRENT (A)
C
-V , COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current as a
Function of Collector Emitter Voltage
CE
0
DS30944 Rev. 5 - 2
2 of 4
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