User guide

DXTA42
Document number: DS31158 Rev. 4 - 2
1 of 4
www.diodes.com
December 2009
© Diodes Incorporated
DXTA42
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DXTA92)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 54.8mg (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
300 V
Collector-Emitter Voltage
V
CEO
300 V
Emitter-Base Voltage
V
EBO
6 V
Continuous Collector Current
I
C
500 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
1 W
Thermal Resistance, Junction to Ambient (Note 3)
R
θ
JA
125 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
300
⎯ ⎯
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(
BR
)
CEO
300
⎯ ⎯
V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
6
⎯ ⎯
V
I
E
= 100μA, I
C
= 0
Collector Cut-off Current
I
CBO
⎯ ⎯
0.1
μA
V
CB
= 200V, I
E
= 0
Emitter Cut-off Current
I
EBO
⎯ ⎯
0.1
μA
V
EB
= 6V, I
C
= 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V
CE
(
SAT
)
⎯ ⎯
0.5 V
I
C
= 20mA, I
B
= 2mA
Base-Emitter Saturation Voltage
V
BE
(
SAT
)
⎯ ⎯
0.9 V
I
C
= 20mA, I
B
= 2mA
Static Forward Current Transfer Ratio
h
FE
25
40
40
⎯ ⎯ ⎯
I
C
= 1mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 30mA, V
CE
= 10V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
50
⎯ ⎯
MHz
I
C
= 10mA, V
CE
= 20V,
f = 100MHz
Output Capacitance
C
obo
⎯ ⎯
3 pF
V
CB
= 20V, f = 1MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
Top View
Device Schematic
Pin Out Configuration
3
1
2,4
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
B
A
S
E
4
3
2
1
C
C
B
E
T
O
P
V
I
E
W
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