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Issue 2 - July 2007 1 www.zetex.com

FCX1051A

SOT89 NPN medium power transistor

Summary

CEO

> 40V

C(cont)

= 3A

CE(sat)

< 120mV @ 1A

CE(sat)

= 57m⍀

= 2W

Complimentary type - FCX1151A

Description

An NPN low voltage, high gain bipolar transistor offering very low

saturation voltage and excellent current handling in the SOT89

package.

Features

• Very low saturation voltage

•High gain

• Small outline package

Applications

• Motor drive

•Strobe flash

• MOSFET and IGBT gate driving

• DC -DC converters

Ordering information

Device mark

051

Device Reel size

(inches)

Tape width

(mm)

Quantity

per reel

FCX1051ATA 7 12 1,000

Pinout - top view

Summary of content (6 pages)

PAGE 1
FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC(cont) = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89 package.
PAGE 2
FCX1051A Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Peak pulse current(a) ICM 10 A IC 3 A Ptot 1(b) W 2(c) W -55 to +150 °C Continuous collector current Power dissipation at Tamb = 25°C Operating and storage temperature range Tj;Tstg NOTES: (a) Measured under pulsed conditions. Pulse width=300␮s. Duty cycle ⱕ2%.
PAGE 3
FCX1051A Electrical characteristics (@ Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Typ. Unit Conditions 150 V IC = 100µA VCES 150 V IC = 100µA Collector-emitter breakdown voltage VCEO 40 V IC = 10mA Collector-emitter breakdown voltage VCEV 150 V IC =100µA, VEB = 1V Emitter-base breakdown voltage V(BR)EBO 5 V IE = 100µA Collector cut-off current ICBO 0.
PAGE 4
FCX1051A Typical characteristics 0.5 0.5 +25°C IC/IB=100 0.4 VCE(sat) - (V) VCE(sat) - (V) 0.4 IC/IB=50 IC/IB=100 IC/IB=200 0.3 0.2 0.1 -55°C +25°C +100°C +150°C 0.3 0.2 0.1 0 0 1m 10m 100m 1 IC - Collector Current (A) 10 1m 10m 100m 1 10 IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 750 600 IC/IB=100 1.6 +100°C VBE(sat) - (V) hFE - Typical gain VCE=2V 450 +25°C 300 -55°C -55°C +25°C +100°C +150°C 1.2 0.8 0.
PAGE 5
FCX1051A Package outline - SOT89 D A C D1 E H E1 L B e B1 DIM e1 Millimeters Inches Min Max Min Max A 1.40 1.60 0.550 0.630 B 0.44 0.56 0.017 B1 0.36 0.48 C 0.35 D D1 DIM Millimeters Inches Min Max Min Max E 2.29 2.60 0.090 0.102 0.022 E1 2.13 2.29 0.084 0.090 0.014 0.019 e 1.50 BSC 0.059 BSC 0.44 0.014 0.017 e1 3.00 BSC 0.118 BSC 4.40 4.60 0.173 0.181 H 3.94 4.25 0.155 0.167 1.52 1.83 0.064 0.072 L 0.89 1.20 0.035 0.
PAGE 6
FCX1051A Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas.