User Manual

ManualsBrandsDiodes ManualsHardwareFMMT493A

NPN: V

CEO

= 60V, I

= 1A, VCE

(SAT)

= 0.5V @1A

Description:

This 60V NPN transistor provides users with

performance combining low saturation and high h

with a continuous current capability of 1A, ensuring

improved circuit efficiencies.

Features

Low saturation voltage

High h

min 300 @ 250mA

= 1A

Applications

· Various driving functions including:-

- Motors

- Actuators

- Soleniod & Relays

· Backlight Inverters.

· DC_DC Modules.

FMMT493A

ISSUE 2 - AUGUST 2003

SEMICONDUCTORS

SOT23 60V NPN SILICON PLANAR

MEDIUM POWER PLANAR TRANSISTOR

SOT23

Device Reel Size Tape Width Quantity

(inches) (mm) Per Reel

FMMT493ATA 7 8mm embossed 3000 units

FMMT493ATC 13 8mm embossed 10000 units

TOP VIEW

Summary of content (6 pages)

PAGE 1
FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE(SAT) = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring improved circuit efficiencies. B SOT23 Features Low saturation voltage High hFE min 300 @ 250mA IC = 1A Applications · Various driving functions including:- Motors - Actuators - Soleniod & Relays · Backlight Inverters.
PAGE 2
FMMT493A ELECTRICAL CHARACTERISTICS (at Tamb = 25 C). PARAMETER SYMBOL MIN. Collector - Base Breakdown Voltage V (BR)CBO Collector - Emitter Breakdown Voltage Emitter - Base MAX. UNIT CONDITIONS.
PAGE 3
FMMT493A ELECTRICAL CHARACTERICS 0.40 (V) 0.35 100m IC/IB=50 0.30 100°C 0.25 IC/IB=100 0.20 V CE(SAT) VCE(SAT) (V) Tamb=25°C 1 IC/IB=50 0.10 IC/IB=10 0m 25°C 0.15 -55°C 0.05 1m 10m 100m 1 1m IC Collector Current (A) 10m 100m 1 IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 1400 1000 1.0 25°C 0.8 800 600 0.6 -55°C 0.4 400 200 0.2 0.0 1m 1.0 1200 0 10m 100m V(BE SAT (V) ) 100°C Typical Gain (hFE) Normalised Gain 1.2 VCE=10V 0.8 0.
PAGE 4
FMMT493A ABSOLUTE MAXIMUM RATINGS.
PAGE 5
FMMT493A THERMAL CHARACTERISTICS 1 DC 1s 100m 100ms 10ms 1ms 100µs Single Pulse Tamb=25°C 10m 100m 1 10 100 VCE Collector-Emitter Voltage (V) 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Safe Operating Area Thermal Resistance (°C/W) Max Power Dissipation (W) IC Collector Current (A) 0.6 Derating Curve 250 200 150 D=0.5 100 Single Pulse D=0.2 D=0.05 50 D=0.
PAGE 6
FMMT493A PAD LAYOUT DETAILS N PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C – 1.10 – 0.043 D 0.37 0.53 0.0145 F 0.085 0.15 0.0033 G NOM 1.9 K 0.01 0.10 0.0004 L 2.10 2.50 0.0825 N NOM 0.95 0.021 0.0059 NOM 0.075 0.004 0.0985 NOM 0.037 © Zetex plc 2003 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.