Manual

FMMT495
Document number: DS33096 Rev. 4 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated
FMMT495
A
Product Line o
f
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
170 — — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
150 — — V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
7 — — V
I
E
= 100µA
Collector Cutoff Current
I
CBO
— — 100 nA
V
CB
= 150V
Emitter Cutoff Current
I
EBO
— — 100 nA
V
EB
= 5V
Collector Emitter Cutoff Current
I
CES
— — 100 nA
V
CE
= 150V
Static Forward Current Transfer Ratio (Note 9)
h
FE
100 — —
—
I
C
= 1mA, V
CE
= 10V
100 — 300
I
C
= 250mA, V
CE
= 10V
50 — —
I
C
= 500mA, V
CE
= 10V
10 — —
I
C
= 1A, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
— — 0.2
V
I
C
= 250mA, I
B
= 25mA
— — 0.3
I
C
= 500mA, I
B
= 50mA
Base-Emitter Turn-On Voltage(Note 9)
V
BE
(
on
)
— — 1.0 V
I
C
= 500mA, V
CE
= 10V
Base-Emitter Saturation Voltage(Note 9)
V
BE
(
sat
)
— — 1.0 V
I
C
= 500mA, I
B
= 50mA
Output Capacitance
C
obo
— — 10 pF
V
CB
= 10V, f = 1MHz
Transition Frequency
f
T
100 — — MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.