Owner's manual

“SUPER SOT” SOT23 PNP SILICON

POWER DARLINGTON TRANSISTOR

ISSUE 1 – AUGUST 1997

FEATURES

* 625mW POWER DISSIPATION

* Very High h

at High Current (5A)

* Extremely Low V

CE(sat)

at High Current (1A)

COMPLEMENTARY TYPE – FMMT634

PARTMARKING DETAIL – 734

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-100 V

Collector-Emitter Voltage V

CEO

-100 V

Emitter-Base Voltage V

EBO

-12 V

Peak Pulse Current I

-5 A

Continuous Collector Current I

-800 mA

Power Dissipation P

tot

625 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic

substrate measuring 15x15x0.6mm

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

SOT23

FMMT734

PAGE 1
“SUPER SOT” SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR FMMT734 ISSUE 1 – AUGUST 1997 FEATURES * 625mW POWER DISSIPATION * Very High hFE at High Current (5A) * Extremely Low VCE(sat) at High Current (1A) E C COMPLEMENTARY TYPE – FMMT634 B PARTMARKING DETAIL – 734 SOT23 ABSOLUTE MAXIMUM RATINGS.
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FMMT734 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
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FMMT734 TYPICAL CHARACTERISTICS 1.2 VCE(sat) -(V) 1.6 +25°C 0.8 0.4 -55°C +25°C +100°C 0.8 0.4 0 0 1mA 150K 10mA 100mA 1A 10A 10mA 1mA 100mA IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC 2.0 VCE=5V +100°C 1A 10A 1A 10A IC/IB=500 1.6 100K VBE(sat) - (V) hFE - Typical Gain IC/IB=500 1.2 IC/IB=100 IC/IB=500 IC/IB=1000 IC/IB=5000 VCE(sat) -(V) 1.6 +25°C 50K 1.2 0.8 -55°C +25°C +100°C 0.