Manual

SOT23 PNP SILICON PLANAR HIGH GAIN

MEDIUM POWER TRANSISTOR

ISSUE 1 – DECEMBER 1997

FEATURES

Very low equivalent on-resistance; R

CE(sat)

=160mΩ at 1.25A

COMPLEMENTARY TYPE – FMMTL617

PARTMARKING DETAIL – L77

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-12 V

Collector-Emitter Voltage V

CEO

-12 V

Emitter-Base Voltage V

EBO

-5 V

Continuous Collector Current I

-1.25 A

Peak Pulse Current I

-4 A

Base Current I

-200 mA

Power Dissipation at T

amb

=25°C P

tot

-500 mW

Operating and Storage Temperature Range T

stg

-55 to +150 °C

FMMTL717

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SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FMMTL717 ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A COMPLEMENTARY TYPE – FMMTL617 PARTMARKING DETAIL – L77 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -1.
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FMMTL717 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -12 -35 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -25 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -8.5 V IE=-100µA -12 -5 MAX.
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FMMTL717 TYPICAL CHARACTERISTICS 0.5 0.5 IC/IB=10 +25°C 0.4 VCE(sat) - (V) VCE(sat) - (V) 0.4 IC/IB=10 IC/IB=20 IC/IB=50 0.3 0.2 -55°C +25°C +100°C +150°C 0.3 0.2 0.1 0.1 0 0 1m 10m 100m 1 IC - Collector Current (A) 1m 10 VCE(sat) v IC VCE=2V 1 10 IC/IB=10 1.2 +100°C +25°C -55°C VBE(sat) - (V) hFE - Typical Gain 800 100m 10m IC - Collector Current (A) VCE(sat) v IC 400 0 0.8 -55°C +25°C +100°C +150°C 0.