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LBN150B01

150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS

General Description

• LMN150B01 is best suited for applications where the load

needs to be turned on and off using control circuits like

micro-controllers, comparators etc. particularly at a point of

load. It features a discrete PNP pass transistor with stable

ce_sat

which does not depend on the input voltage and can

support maximum continuous current of 150 mA up to

125 °C (see fig. 1). It also contains a discrete NPN that can

be used as a control. The component devices can be used

as a part of a circuit or as standalone discrete devices.

Features

• Epitaxial Planar Die Construction

• Ideally

Suited for Automated Assembly Processes

• Lead Free By

Design/ROHS Compliant (Note 1)

• "Green" Dev

ice (Note 2)

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic. "Green Molding"

Compound. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity

: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper

leadframe. Solderable per MIL- STD -202, Method 208

• Marking Information: See Page 6

• Ordering Information: See Page 6

• Weight: 0.016 grams (approximate)

NEW PRODUCT

SOT-26

BQ1

BQ2

CQ2

EQ1

EQ2CQ1

Schematic and Pin Configuration

Maximum Ratings, Total Device @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Output Current

out

150 mA

Thermal Characteristics @T

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 3)

300 mW

der

2.33

mW/°C Power Derating Factor above 120 °C

Thermal Resistance, Junction to Ambient Air (Note 3)

(Equivalent to one heated junction of PNP transistor)

417

°C/W

DS30749 Rev. 4 - 2 1 of 7

www.diodes.com

LBN150B01

Junction Operation and Storage Temperature Range

, T

STG

-55 to +150

°C

Notes: 1. No purposefully added lead.

2 . Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Page 7.

Please click here to visit our online spice models database.

Summary of content (7 pages)

PAGE 1
LBN150B01 150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS Please click here to visit our online spice models database. NEW PRODUCT General Description • LMN150B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load.
PAGE 2
NEW PRODUCT Maximum Ratings: Discrete PNP Transistor (Q1) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Output Current - continuous (Note 4) @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Maximum Ratings: Discrete NPN Transistor (Q2) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Output Current - continuous (Note 4) DC Current Gain Symbol VCBO VCEO VEBO IC Unit VCBO VCEO VEBO ICEX IBL ICBO ICEO IEBO -40 -40
PAGE 3
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current Collector-Base Cut Off Current Collector-Emitter Cut Off Current Emitter-Base Cut Off Current ON CHARACTERISTICS (Note 4) DC Current Gain Min Max Unit VCBO VCEO VEBO ICEX IBL ICBO ICEO IEBO 60 40 6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 50 50 50 50 50 V V V nA nA nA nA nA IC = 10uA, IE = 0 IC = 1.
PAGE 4
Characteristics of NPN Transistor (Q2): 200 IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN 100 10 150 100 50 1 0 2 4 6 8 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Collector Current vs. Collector-Emitter Voltage 0 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 1.4 VBE, BASE-EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 100 10 1 0.1 0.01 0.1 1.2 1 0.8 0.6 0.4 0.2 0 0.
PAGE 5
Characteristics of PNP Transistor (Q1): 200 1,000 hFE,, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) TA = 125°C TA = 150°C 150 100 TA = 85°C T A = 25°C 100 TA = -55° C 10 50 1 0 6 8 10 2 4 VCE, COLLECTOR - EMITTER VOLTAGE (V) Fig. 10 Collector Current vs. Collector-Emitter Voltage 1 0 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical DC Current Gain vs. Collector Current 1.
PAGE 6
Vin Q1 PNP Transistor and NPN Transistor integrated as one in LBN150B01 can be used as a discrete entity for general purpose applications or as a part of a circuit to function as a Load Switch. When it is used as the latter as shown in Example Circuit Schematic, various input voltage sources can be used as long as they do not exceed the maximum rating of the device. These devices are designed to deliver continuous output load current up to maximum of 150 mA.
PAGE 7
Package Outline Dimensions NEW PRODUCT A SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 F ⎯ ⎯ 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° ⎯ α All Dimensions in mm B C H K M J D F L Suggested Pad Layout E Z E C G Y Dimensions Value (in mm) Z 3.20 1.60 G 0.55 X 0.80 Y 2.40 C 0.