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LMN400B01

Document number: DS30699 Rev. 8 - 2

1 of 9

www.diodes.com

July 2012

LMN400B01

400mA LOAD SWITCH FEATURING PNP TRANSISTOR

AND N-MOSFET WITH GATE PULL-DOWN RESISTOR

Product Summary

Reference

Device

Type

(NOM)

Figure

Q1 PNP Transistor 10K 220

⎯

Q2 N-MOSFET

⎯ ⎯

37K 2

Description

LMN400B01 is best suited for applications where the load needs to

be turned on and off using control circuits like micro-controllers,

comparators etc. particularly at a point of load. It features a discrete

pass transistor with stable V

CE(SAT)

which does not depend on input

voltage and can support continuous maximum current of 400 mA . It

also contains a discrete N-MOSFET with gate pull-down resistor that

can be used as control. The component devices can be used as a

part of a circuit or as a stand alone discrete device.

Features

• Voltage Controlled Small Signal Switch

• N-MOSFET with Gate Pull-Down Resistor

• Ideally Suited for Automated Assembly Processes

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

• Case: SOT26

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.016 grams (approximate)

Ordering Information (Note 4)

Part Number

Case Packaging

LMN400B01-7 SOT26 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2006 2007 ….. 2012 2013 2014 2015 2016 2017

Code T U ….. Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

Internal Schematic

Top View



PM3

PM3 = Product Type Marking Code,

YM = Date Code Marking

Y = Year, e.g., Z = 2012

M = Month, e.g., 9 = September

Summary of content (9 pages)

PAGE 1
LMN400B01 400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR Product Summary Features Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Q1 PNP Transistor 10K 220 Q2 N-MOSFET ⎯ ⎯ ⎯ 37K • • • • • Figure 2 2 Description Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-Down Resistor Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
PAGE 2
LMN400B01 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value PD 300 mW Power Derating Factor above +100°C PDER 2.
PAGE 3
LMN400B01 Electrical Characteristics: Pre-Biased PNP Transistor (Q1) (@TA = +25°C, unless otherwise specified.
PAGE 4
LMN400B01 Electrical Characteristics: ESD Protected N-Channel MOSFET (Q2) (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage V(BR)DSS 60 ⎯ ⎯ V VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 µA VGS =0V, VDS = 60V OFF CHARACTERISTICS (Note 6) Gate-Body Leakage Current, Forward IGSSF ⎯ ⎯ 0.95 mA VGS = 20V, VDS = 0V Gate-Body Leakage Current, Reverse IGSSR ⎯ ⎯ -0.
PAGE 5
LMN400B01 Pre-Biased PNP Transistor Characteristics TA = -55° C T A = 25°C TA = 125°C TA = 85°C T A = 150°C VCE(SAT), COLLECTOR VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) IC/IB = 10 IC, COLLECTOR CURRENT (A) Fig. 5 VCE(SAT) vs. IC TA = 150°C TA = 25°C TA = 85°C VBE(ON), BASE EMITTER VOLTAGE (V) VBE(SAT), BASE EMITTER VOLTAGE (V) TA = -55° C TA = 150° C TA = 25°C TA = 85°C IC/IB = 10 VCE = 5V T A = 125°C TA = 150°C TA = -55° C T A = 25°C TA = 85°C IC, COLLECTOR CURRENT (mA) Fig.
PAGE 6
LMN400B01 Typical N-Channel MOSFET (Q2) Characteristics T A = 25°C VDS = 10V VGS = 10V T A =-55°C 1.0 TA = 25°C VGS = 5V VGS = 8V 0.8 VGS = 4V 0.6 0.4 0.2 T A = 125°C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 6V TA = 85°C T A = 150°C VGS = 3V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Output Characteristics 0 5 4 2 1 3 VGS, GATE-SOURCE VOLTAGE (V) Fig. 11 Transfer Characteristics 5 2.2 VGS = 5V Pulsed VDS = 10V VDS = VGS ID = 0.25mA Pulsed 2 1.
PAGE 7
LMN400B01 VGS = 10V Pulsed ID = 300mA ID = 150mA IDR, REVERSE DRAIN CURRENT (A) Typical N-Channel MOSFET (Q2) Characteristics (cont.) VGS = 0V Pulsed TA = 125°C T A = 150°C TA = 85°C TA = 25° C T A = 0°C TA = -25°C TA = -55° C 0 gFS, FORWARD TRANSCONDUCTANCE (mS) IS, REVERSE DRAIN CURRENT (A) Tj, JUNCTION TEMPERATURE (°C) Fig. 16 Static Drain-Source On-State Resistance vs.
PAGE 8
LMN400B01 Application Details Vin PNP Transistor and ESD Protected N-MOSFET integrated as one in LMN400E01 can be used as a discrete entity for general applications or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Figure 20, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of 400mA.
PAGE 9
LMN400B01 Suggested Pad Layout C2 Z C2 Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 G C1 C2 2.40 0.95 Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).