Owner's manual
LMN400B01
Document number: DS30699 Rev. 8 - 2
5 of 9
www.diodes.com
July 2012
© Diodes Incorporated
LMN400B01
Pre-Biased PNP Transistor Characteristics
I , COLLECTOR CURRENT (A)
Fig. 5 V vs. I
C
CE(SAT) C
V,
C
O
LLE
C
T
O
R
V
O
L
T
A
G
E (V)
CE(SAT)
I/I = 10
CB
T = 150 C
A
°
T = 125 C
A
°
T= 25C
A
°
T= 85C
A
°
T= -55C
A
°
I , COLLECTOR CURRENT (A)
Fig. 6 V vs. I
C
CE(SAT) C
V,
C
O
LLE
C
T
O
R
V
O
L
T
A
G
E (V)
CE(SAT)
I/I = 20
CB
T = 150 C
A
°
T = 125 C
A
°
T= 25C
A
°
T= 85C
A
°
T=-55C
A
°
I , COLLECTOR CURRENT (mA)
Fig. 7 V vs. I
C
BE(SAT) C
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(SAT)
I/I = 10
CB
T = 150 C
A
°
T = 125 C
A
°
T= 25C
A
°
T= 85C
A
°
T= -55C
A
°
I , COLLECTOR CURRENT (mA)
Fig. 8 V vs. I
C
BE(ON) C
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I/I = 10
V = 5V
CB
CE
T = 150 C
A
°
T = 125 C
A
°
T= 25C
A
°
T= 85C
A
°
T= -55C
A
°
I , COLLECTOR CURRENT (mA)
Fig. 9 h vs. I
C
FE C
h, D
C
C
U
R
R
EN
T
G
AIN
FE
V = 5V
CE
T=-55C
A
°
T = 150 C
A
°
T= 25C
A
°
T= 85C
A
°
T = 125 C
A
°