Owner's manual
LMN400B01
Document number: DS30699 Rev. 8 - 2
6 of 9
www.diodes.com
July 2012
© Diodes Incorporated
LMN400B01
Typical N-Channel MOSFET (Q2) Characteristics
0
0.2
0.4
0.6
0.8
1.0
012345
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Output Characteristics
DS
I, D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V = 3V
GS
V = 4V
GS
V = 5V
GS
V = 10V
GS
V = 6V
GS
V = 8V
GS
T = 25C
A
°
V , GATE-SOURCE VOLTAGE (V)
Fig. 11 Transfer Characteristics
GS
I, D
R
AI
N
C
U
R
R
E
N
T (A)
D
0
1
2
3
4
5
T=-55C
A
°
T= 25C
A
°
T= 85C
A
°
T = 125 C
A
°
T= 150C
A
°
V = 10V
DS
T , JUNCTION TEMPERATURE (°C)
Fig. 12 Gate Threshold Voltage
vs. Junction Temperature
J
1.0
1.2
1.4
1.6
1.8
2
2.
2
-50
-75
-25
025
50 75 100
125 150
V = 10V
V= V
I = 0.25mA
Pulsed
DS
DS GS
D
I DRAIN CURRENT (A)
Fig. 13 Static Drain-Source On-Resistance
vs. Drain Current
D
,
T = -55C
A
°
T = 125 C
A
°
V = 5V
Pulsed
GS
T = 25C
A
°
T = 85C
A
°
T = 150 C
A
°
1
I , DRAIN CURRENT (A)
Fig. 14 Static Drain-Source On-Resistance
vs. Drain Current
D
4
V = 10V
Pulsed
GS
T = 150C
A
°
T = 125C
A
°
T = 85C
A
°
T = 25C
A
°
T = -55C
A
°
0
V GATE SOURCE VOLTAGE (V)
Fig. 15 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
I= 115mA
D
I= 50mA
D
T = 25C
Pulsed
A
°
R
,
S
T
A
T
I
C
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
S
T
A
T
E
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
W