Owner's manual
LMN400B01
Document number: DS30699 Rev. 8 - 2
7 of 9
www.diodes.com
July 2012
© Diodes Incorporated
LMN400B01
Typical N-Channel MOSFET (Q2) Characteristics (cont.)
0
T , JUNCTION TEMPERATURE ( C)
Fig. 16
j
°
Static Drain-Source On-State Resistance
vs. Junction Temperature
V = 10V
Pulsed
GS
I = 300mA
D
I = 150mA
D
I , REVERSE DRAIN CURRENT (A)
DR
V = 0V
Pulsed
GS
T= -55C
A
°
T = 150 C
A
°
T = 125 C
A
°
T = 85C
A
°
T = 25C
A
°
T = 0C
A
°
T = -25C
A
°
1
I , REVERSE DRAIN CURRENT (A)
S
V= 0V
GS
V = 10V
GS
T = 25°C
Pulsed
A
g , FORWARD TRANSCONDUCTANCE (mS)
FS
T= 25C
A
°
T= -25C
A
°
T= 85C
A
°
T= -55C
A
°
T = 125 C
A
°
T = 150 C
A
°