Instruction Manual

LMN400E01
Document number: DS30750 Rev. 8 - 2
3 of 10
www.diodes.com
July 2011
© Diodes Incorporated
LMN400E01
Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Cut Off Current
I
CBO
⎯ ⎯
-500 nA
V
CB
= -50V, I
E
= 0
Collector-Emitter Cut Off Current
I
CEO
⎯ ⎯
-1 uA
V
CE
= -50V, I
B
= 0
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
-50
⎯ ⎯
V
I
C
= -10uA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(
BR
)
CEO
-50
⎯ ⎯
V
I
C
= -2mA, I
B
= 0
Input Off Voltage
V
I
(
OFF
)
-0.3 -0.55
⎯
V
V
CE
= -5V, I
C
= -100uA
Ouput Current
I
O(OFF)
⎯ ⎯
-1 uA
V
CC
= -50V, V
I
= 0V
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ ⎯
-0.15 V
I
C
= -10mA, I
B
= -0.3mA
⎯ ⎯
-0.3 V
IC
= -200mA, I
B
= -20mA
⎯ ⎯
-0.5 V
I
C
= -400mA, I
B
= -40mA
⎯ ⎯
-0.6 V
I
C
= -500mA, I
B
= -50mA
DC Current Gain
h
FE
55 220
⎯ ⎯ V
CE
= -5V, I
C
= -50mA
55 225
⎯ ⎯ V
CE
= -5V, I
C
= -400mA
Input On Voltage
V
I
(
ON
)
-3 -1.5
⎯
V
V
O
= -0.3V, I
C
= -20mA
Output Voltage (Equivalent to V
CE
(
SAT
)
) V
O
(
ON
)
⎯
-0.1 -0.3 V
I
o
/I
I
= -50mA /-2.5mA
Input Current
I
I
⎯
-18 -45 mA
V
I
= -5V
Base-Emitter Turn-on Voltage
V
BE
(
ON
)
⎯
-1.2 -1.6 V
V
CE
= -5V, I
C
= -400mA
Base-Emitter Saturation Voltage
V
BE
(
SAT
)
⎯
-1.9 -2.5 V
I
C
= -50mA, I
B
= -5mA
Input Resistor (Base), +/- 30% R2 0.154 0.22 0.286
KΩ
⎯
Pull-up Resistor (Base to Vcc supply), +/- 30% R1 7 10 13
KΩ
⎯
Resistor Ratio (Input Resistor/Pullup resistor) R1/R2 36 45 55
⎯ ⎯
SMALL SIGNAL CHARACTERISTICS
Gain Bandwidth Product
f
T
⎯
200
⎯
MHz
V
CE
= -10V, I
E
= -5mA,
f = 100MHz
Notes: 5. Short duration pulse test used to minimize self-heating effect.