Instruction Manual

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MJD32CQ

Document number: DS37050 Rev. 1 - 2

1 of 7

www.diodes.com

March 2014

MJD32CQ

100V PNP HIGH VOLTAGE TRANSISTOR IN TO252

Description

This Bipolar Junction Transistor (BJT) has been designed to meet the

stringent requirements of Automotive Applications.

Features

 BV

CEO

> -100V

 I

= -3A high Continuous Collector Current

 I

= -5A Peak Pulse Current

 Ideal for Power Switching or Amplification Applications

 Complementary NPN Type: MJD31CQ

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: TO252 (DPAK)

 Case Material: Molded Plastic, "Green" Molding Compound

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight: 0.34 grams (approximate)

Ordering Information (Notes 4 & 5)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel

MJD32CQ-13 Automotive MJD32C 13 16 2,500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Top View

Device Schematic

Pin Out Configuration

Top view

MJD32C = Product Type Marking Code

= Manufacturers’ code marking

YYWW = Date Code Marking

YY = Last Digit of Year (ex: 10 = 2010)

WW = Week Code (01 - 53)

TO252 (DPAK)

Summary of content (7 pages)

PAGE 1
MJD32CQ 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.   Features            BVCEO > -100V IC = -3A high Continuous Collector Current ICM = -5A Peak Pulse Current Ideal for Power Switching or Amplification Applications Complementary NPN Type: MJD31CQ Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free.
PAGE 2
MJD32CQ Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Continuous Base Current Symbol VCBO VCEO VEBO IC ICM IB Value -100 -100 -6 -3 -5 -1 Unit V V V A A A Value 3.9 2.1 1.6 15 32 59 80 8.4 -55 to +150 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.
PAGE 3
MJD32CQ Thermal Characteristics 10 VCE(sat) -IC Collector Current (A) -IC Collector Current (A) 10 Limited DC 1 1s 100ms 10ms 100m 1ms 100µs Single Pulse T amb=25°C 10m 100m 1 10 100 -VCE Collector-Emitter Voltage (V) VCE(sat) Limited 10ms 1ms 0.1 0.01 0.1 60 D=0.5 40 Single Pulse 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Thermal Resistance (°C/W) Thermal Resistance (°C/W) Minimum Copper 20 Transient Thermal Impedance Document number: DS37050 Rev.
PAGE 4
MJD32CQ Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Emitter Breakdown Voltage (Note 11) Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage (Note 11) Base-Emitter Turn-On Voltage (Note 11) Symbol BVCEO ICEO ICES IEBO VCE(sat) VBE(on) DC Current Gain (Note 11) hFE Current Signal Current Gain Current Gain-Bandwidth Product Hfe fT Min -100      25 10 20 3.
PAGE 5
MJD32CQ 1,000 CAPACITANCE (pF) f = 1MHz Cibo 100 Cobo 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Figure 5 Typical Capacitance Characteristics MJD32CQ Document number: DS37050 Rev. 1 - 2 5 of 7 www.diodes.
PAGE 6
MJD32CQ Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E A 3 b 2 c ° 1 ± ° 7 3 L 4 L H 2 A D x 3 b e TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21   e 2.286   E 6.45 6.70 6.58 E1 4.32   H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.
PAGE 7
MJD32CQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.