Instruction Manual

MJD32CQ
Document number: DS37050 Rev. 1 - 2
2 of 7
www.diodes.com
March 2014
© Diodes Incorporated
MJD32CQ
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-100 V
Collector-Emitter Voltage
V
CEO
-100 V
Emitter-Base Voltage
V
EBO
-6 V
Continuous Collector Current
I
C
-3 A
Peak Pulse Collector Current
I
CM
-5 A
Continuous Base Current
I
B
-1 A
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 6)
P
D
3.9
W
(Note 7) 2.1
(Note 8) 1.6
(Note 9) 15
Thermal Resistance, Junction to Ambient Air
(Note 6)
R
θJA
32
°C/W
(Note 7) 59
(Note 8) 80
Thermal Resistance, Junction to Leads (Note 9)
R
θJL
8.4
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
ESD Ratings (Note 10)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (6), except mounted on 25mm x 25mm 1oz copper.
8. Same as note (6), except mounted on minimum recommended pad (MRP) layout.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.