User guide

MMDT3946
Document number: DS30123 Rev. 11 - 2
2 of 6
www.diodes.com
October 2008
© Diodes Incorporated
MMDT3946
Electrical Characteristics, NPN 3904 Section @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V
(BR)CBO
60
⎯
V
I
C
= 10μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
40
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5.0 6.0 V
I
E
= 10μA, I
C
= 0
Collector Cutoff Current
I
CEX
⎯
50 nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
Base Cutoff Current
I
BL
⎯
50 nA
V
CE
= 30V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 6)
DC Current Gain
h
FE
40
70
100
60
30
⎯
⎯
300
⎯
⎯
⎯
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.20
0.30
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
0.65
⎯
0.85
0.95
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
4.0 pF
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance
C
ibo
⎯
8.0 pF
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
h
ie
1.0 10
kΩ
Voltage Feedback Ratio
h
re
0.5 8.0 x 10
-4
Small Signal Current Gain
h
fe
100 400
⎯
Output Admittance
h
oe
1.0 40
μS
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
f
T
300
⎯
MHz
V
CE
= 20V, I
C
= 20mA,
f = 100MHz
Noise Figure NF
⎯
5.0 dB
V
CE
= 5.0V, I
C
= 100μA,
R
S
= 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯
35 ns
Rise Time
t
r
⎯
35 ns
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
Storage Time
t
s
⎯
200 ns
Fall Time
t
f
⎯
50 ns
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
Notes: 6. Short duration pulse test used to minimize self-heating effect.