Manual

MMDT4146
Document number: DS30162 Rev. 11 - 2
3 of 5
www.diodes.com
January 2009
© Diodes Incorporated
MMDT4146
0
50
100
25 50
75
100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Total Device, Note 1)
A
150
200
250
300
350
0
RC/W
θ JA
° = 625
1
10
1,000
100
0.1
1
10
1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain
vs. Collector Current (PNP-4126)
C
0.01
0.1
10
1
1
10
100
1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE
CE(SAT)
(V)
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP-4126)
C
0.5
0.6
0.7
0.8
0.9
1.0
110100
V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E
BE(SAT)
(V)
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current (PNP-4126)
C
I
C
I
B
= 10
1
100
10
0.1
1
10
100
C
A
P
A
C
I
T
AN
C
E (p
F
)
V , REVERSE VOLTAGE (V)
Fig. 5 Typical Capacitance Characteristics (PNP-4126)
R
1
10
1,000
100
0.1
1
10
1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 6 Typical DC Current Gain
vs. Collector Current (NPN-4124)
C