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MMDT5451

COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Complementary Pair One 5551-Type NPN

One 5401-Type PNP

DS30171 Rev. 9 - 2

1 of 5

www.diodes.com

MMDT5451

• Epitaxial Planar Die Construction

• Ideal for Medium Power Amplification and Switching

• Ultra-Small Surface Mount Package

• Lead Free/RoHS Compliant (Note 3)

• "Green" Device (Note 4 and 5)

Mechanical Data

• Case: SOT-363

• Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Terminal Connections: See Diagram

• Marking Information: KNM, See Page 5

• Ordering & Date Code Information: See Page 5

• Weight: 0.006 grams (approximate)

SOT-363

Dim Min Max

A 0.10 0.30

B 1.15 1.35

C 2.00 2.20

D 0.65 Nominal

F 0.30 0.40

H 1.80 2.20

J — 0.10

K 0.90 1.00

L 0.25 0.40

M 0.10 0.25

0° 8°

All Dimens mm ions in

E1, B1, C1 = PNP5401 Section

E2, B2, C2 = NPN5551 Section

Maximum Ratings, NPN 5551 Section @T

= 25°C unless otherwise specified

Characteristic Symbol NPN5551 Unit

Collector-Base Voltage

CBO

180 V

Collector-Emitter Voltage

CEO

160 V

Emitter-Base Voltage

EBO

6.0 V

Collector Current - Continuous (Note 1)

200 mA

Power Dissipation (Note 1, 2)

200 mW

Thermal Resistance, Junction to Ambient (Note 1)

625

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Maximum Ratings, PNP 5401 Section @T

= 25°C unless otherwise specified

Characteristic Symbol PNP5401 Unit

Collector-Base Voltage

CBO

-160 V

Collector-Emitter Voltage

CEO

-150 V

Emitter-Base Voltage

EBO

-5.0 V

Collector Current – Continuous (Note 1)

-200 mA

Power Dissipation (Note 1, 2)

200 mW

Thermal Resistance, Junction to Ambient (Note 1)

625 K/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Maximum combined dissipation.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

Summary of content (5 pages)

PAGE 1
MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Complementary Pair One 5551-Type NPN One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) • • • • • • • B1 C2 E1 B C B2 E2 C1 G H Mechanical Data • • SOT-363 A K Case: SOT-363 Case Material: Molded Plastic.
PAGE 2
Electrical Characteristics, NPN 5551 Section @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Max Unit Collector-Base Breakdown Voltage Test Condition V(BR)CBO 180 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 160 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.
PAGE 3
0.15 150 100 50 IC IB = 10 0.14 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 200 0.13 0.12 TA = 150°C 0.11 0.10 0.09 0.08 T A = 25°C 0.07 0.06 0.05 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature (Total Device) 0.04 200 TA = -50°C 1 1.
PAGE 4
10,000 VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 hFE, DC CURRENT GAIN 1,000 100 10 1 0.9 VCE = 5V 0.8 0.7 0.6 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7, DC Current Gain vs. Collector Current (PNP5401) T A = 25°C 0.5 0.4 TA = 150°C 0.3 0.2 0.1 0.1 1 TA = -50°C 1.0 10 IC, COLLECTOR CURRENT (mA) Fig. 8, Base Emitter Voltage vs. Collector Current (PNP5401) 100 1,000 ft, GAIN BANDWIDTH PRODUCT (MHz) VCE = 10V 100 10 1 1 DS30171 Rev. 9 - 2 10 IC, COLLECTOR CURRENT (mA) Fig.
PAGE 5
Ordering Information Notes: 7. (Note 7) Device Packaging Shipping MMDT5451-7-F SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.