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MMST4403

Datasheet number: DS30083 Rev. 8 - 2

1 of 5

www.diodes.com

June 2011

MMST4403

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (MMST4401)

• Ultra-Small Surface Mount Package

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, "Green" Molding Compound,

Note 4. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

• Weight: 0.006 grams (approximate)

Ordering Information (Note 3)

Device

Packaging Shipping

MMST4403-7-F

SOT-323 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top view

Device symbol

Pinout – top view

SOT-323

K3T = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: N = 2002

M = Month ex: 9 = Se

tembe

K3T

Summary of content (5 pages)

PAGE 1
MMST4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (MMST4401) Ultra-Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) • • • • Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4.
PAGE 2
MMST4403 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V VEBO -5.0 V Collector Current – Continuous (Note 4) IC -600 mA Power Dissipation (Note 4) Pd 200 mW RθJA 625 K/W Tj, TSTG -55 to +150 °C Emitter-Base Voltage Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage Temperature Range Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.
PAGE 3
MMST4403 1,000 300 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 350 250 200 150 100 100 10 50 0 1 1 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 30 0 25 Cibo 10 5.0 Cobo 1.0 -0.1 -1.0 -10 REVERSE VOLTS (V) Fig. 3 Typical Capacitance 1.2 I C = 10mA IC = 1mA I C = 100mA I = 300mA C IC = 30mA 1.0 0.8 0.6 0.4 0.2 1 0.1 10 100 0.01 IB BASE CURRENT (mA) Fig.
PAGE 4
MMST4403 fT, GAIN BANDWIDTH PRODUCT (MHz) 1,000 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current Package Outline Dimensions MMST4403 Datasheet number: DS30083 Rev. 8 - 2 4 of 5 www.diodes.
PAGE 5
MMST4403 Suggested Pad Layout IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).